Infrared spectra of vacuum-deposited molybdenum trioxide thin films have been studied. The variation of electrical conductivity with temperature for different thicknesses of films has been investigated. Electrical conductivity of the films as a function of time of UV irradiation was found to increase initially, then decreased rapidly and reached a steady value. It increased and reached a steady value with time when irradiation was cutoff .
Electrwhromic vanadium pentoxide (V205) thin films are prepared by the physical vapour deposition method using an electron beam gun. The transmission spectra of V2O5 thin films are measured and studied before and after UV irradiation. It is observed that the optical transmission minimum which occurs at 320nm does not change with irradiation. The measurement of optical band gaps of V205 thin films before and after irradiation shows that the band gap increases due to irradiation. The electrical conductivity of the films as a function of time of irradiation is found to decrease rapidly and reaches a steady value with time when the irradiation is cut off. V205 thin films can be used for storing optical information and for development of optical memory switching devices. Activation energies for different thicknesses of thin films are reported.
Synthesis and characterization of inorganic silicon oxycarbide glass thin films by reactive rf-magnetron sputtering J. Vac. Sci. Technol. A 25, 153 (2007); 10.1116/1.2404688 Ferroelectric (Pb,La)(Zr,Ti)O3 epitaxial thin films on sapphire grown by rfplanar magnetron sputtering J. Appl. Phys. 60, 736 (1986); 10.1063/1.337423 rf planar magnetron sputtering and characterization of ferroelectric Pb(Zr,Ti)O3 films J.
Ferroelectric lead lanthanum zirconate titanate (PLZT) films are deposited on R-plane sapphire using RF triode magnetron sputtering. Perovskite PLZT films with the desired composition (9/65/35) are obtained using compensated deposition techniques around 500 degrees C and postdeposition annealing at 650 degrees C. The deposited films exhibit good optical and electrooptical properties. The room temperature dielectric constant of the films was 1800 at 10 kHz. The refractive index of the films was in the range of 2.2-2.5. The films showed a quadratic electrooptic effect with R=0.6 x10(-16) m(2)/V(2). The development of PLZT on silicon-on-sapphire smart spatial light modulators using these films is also explored.
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