Au(evaporated film) -semiconductor(substrate) systems were studied by Auger electron spectroscopy. For semiconductors with energy gaps (Eg) smaller than ∼2.5 eV, even at room temperature a considerable fraction of atoms constituting the semiconductors were found to accumulate on the surfaces of Au films, indicating ready interfacial interaction between these materials. Study of the interface regions of the above systems verified the occurrence of the room-temperature interfacial reactions.

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Valence electronic states of third-period elements (Al, Si, P, and S) dissolved in Cu were pursued through the chemical effect of the LVV Auger transition from these elements using Auger electron spectroscopy (AES). Indeed, the LVV Auger signals of Al, Si, P, and S in Cu hosts differed completely from those in the pure (metal or semiconductor) states, indicating the presence of the definite chemical effect. The origin of the chemical effect was discussed in connection with similar studies by soft x-ray spectroscopy (SXS).

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