Dynamical observation of room temperature interfacial reaction in metal-semiconductor system by Auger electron spectroscopy

Hiraki, Akio; Kim, S.; Kammura, W.; Iwami, Motohiro

doi:10.1016/0039-6028(79)90450-3

Cited by 37 publications

(18 citation statements)

References 8 publications

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“…The triangular protrusions which we found by SEM on Au/(111) GaAs after heating were observed by Kumar (8) by TEM. (15). The fact that interdiffusion occurred in Au/GaAs at room temperature is in agreement with the Auger electron spectroscopy results of Hiraki et aI.…”

Section: Discussionsupporting

confidence: 90%

Physiochemical Effects of Heating Gold Thin Films on Gallium Arsenide

Leung

Wong

Chung

et al. 1983

J. Electrochem. Soc.

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The physiochemical effects of heating gold thin films on GaAs, namely, the arsenic evolution, gold-to-silver color transition, and microstructural changes, were investigated by in situ mass spectrometric evolved gas analysis and scanning electron microscopy. The gold-to-silver color transition was found to occur after a small amount of arsenic evolution. The transition temperature increased with increasing air pressure and gold film thickness. The relative quantities of arsenic species evolved followed the order As4 > Ase> As > As3. We observed a new microstructure consisting of interconnected irregularly shaped protrusions which appeared after a small amount of arsenic evolution and changed to the previously reported microstructure of aligned rectangular protrusions near the completion of the arsenic evolution. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 192.236.36.29ABSTRACT An integration technique is described which allows the rapid calculation of the correction factor introduced by Schumann and Gardner for spreading resistance calculations. The time required to calculate one point is typically 0.03 sec on a VAX-11/780 minicomputer, the accuracy being better than 0.1%. The technique can be easily implemented for using a resistivity-dependent contact radius. Model spreading resistance data are used to illustrate the efficiency of the integration technique.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 192.236.36.29 Downloaded on 2015-04-10 to IP

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Section: Discussionsupporting

confidence: 90%

Physiochemical Effects of Heating Gold Thin Films on Gallium Arsenide

Leung

Wong

Chung

et al. 1983

J. Electrochem. Soc.

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“…Au reacts strongly with InP even down to room temperature [19] until the thermodynamically defined equilibrium phase is reached [20]. As a consequence, In depletion from the Au particle alloy via chlorination creates a driving force for dissolving In from the NW/Au-interface into the particle.…”

Section: Resultsmentioning

confidence: 99%

Dynamics of extremely anisotropic etching of InP nanowires by HCl

Borgström

Wallentin

Kawaguchi

et al. 2011

Chemical Physics Letters

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“…However, when a Ga i encounters a gold vacancy V Au , the vacancy is annihilated and a substitutional Ga s is formed. 32,35 Therefore, the diffusion rate is approximated as equal to D Au . As the Ga i are removed, more are allowed to enter from the GaAs.…”

Section: Discussionmentioning

confidence: 99%

“…These are then modeled as fixed point defect scattering sites. 32,35 The solubility limit is set at 0.1% which is the approximate detection threshold for these techniques. During the implantation, gold vacancies are created that drive the diffusion of Ga into the Au layer.…”

Section: Discussionmentioning

confidence: 99%

Ballistic electron emission microscopy studies of electron scattering in Au/GaAs Schottky diodes damaged by focused ion beam implantation

McNabb

Craighead

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Ballistic electron emission microscopy is used to investigate the electron scattering properties of undamaged and focused ion beam implanted Au/GaAs diodes. Implanted regions show decreased ballistic electron transmission attributed to increased scattering. A quantitative model of electron transport is developed that includes quantum mechanical transmission at the interface, scattering effects from optical phonons and implantation induced defects in the semiconductor, and scattering in the metal layer. Model predictions of scattering in undamaged regions show good agreement with the data. However, we conclude additional scattering effects must be included to describe the implanted structures.

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Dynamical observation of room temperature interfacial reaction in metal-semiconductor system by Auger electron spectroscopy

Cited by 37 publications

References 8 publications

Physiochemical Effects of Heating Gold Thin Films on Gallium Arsenide

Physiochemical Effects of Heating Gold Thin Films on Gallium Arsenide

Dynamics of extremely anisotropic etching of InP nanowires by HCl

Ballistic electron emission microscopy studies of electron scattering in Au/GaAs Schottky diodes damaged by focused ion beam implantation

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