Articles you may be interested inReactive sputtering of δ-ZrH2 thin films by high power impulse magnetron sputtering and direct current magnetron sputtering J. Vac. Sci. Technol. A 32, 041510 (2014); 10.1116/1.4882859 Radio-frequency superimposed direct current magnetron sputtered Ga:ZnO transparent conducting thin films J. Appl. Phys. 111, 093718 (2012); 10.1063/1.4709753Optical and electrical properties of direct-current magnetron sputtered ZnO:Al films Insulating films of InzO, were prepared by sputtering indium in the presence of pure oxygen using dc magnetron sputtering. Transmission electron microscopic investigations showed the films to be single phase and polycrystalline. Analysis of the optical transmittance data showed the films to have an optical band gap of 3.71 AO.01 eV. Tunnel junctions were made with high T, superconductors Bi$r&a,C&O, and NdBa2Cus07--S using indium oxide as the barrier layer and PbO.sIncs as the counter electrode. The conductance spectra displayed prominent structures attributable to energy gap. The reduced gap parameters for Bi,Sr&a,Cu,O,, and NdBa$u30,-s were found to be 4.OhO.5 and 5.2hO.6, respectively. 2572

Thermal stability of silver selenide thin films formed from the solid-state reaction of Ag-Se diffusion couples on Si substrates covered with a thin Cr film, is investigated. Glancing angle X-ray diffraction (GXRD), XPS, atomic force microscopy (AFM) and Rutherford backscattering spectrometry (RBS) are used to characterize the as-deposited films and those annealed at 100, 200, 300, and 400• C. The results reveal the formation of polycrystalline orthorhombic silver selenide films that remain stable without compositional change upon thermal annealing, in marked contrast to the agglomeration exhibited by silver selenide films deposited on Si without Cr film. The improvement in the thermal stability is attributed to compressive stress relief by a grainy morphology with large surface area, the formation of which is promoted by partially oxidized Cr adhesion film.

Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ∼5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ∼4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase.

Articles you may be interested in X-ray irradiation of soda-lime glasses studied in situ with surface plasmon resonance spectroscopy A two-prism experimental arrangement having wide angular scan ranges for the study of surface plasmon resonance is presented. The setup has a single rotating element instead of a high cost goniometer and a stationary photodetector which is positioned such that it always receives the reflected beam normally. The usefulness of the setup has been verified by experimental and theoretical studies of plasmon resonance at an Au-air interface.

Micro-Raman spectroscopy measurements were made on polycrystalline and amorphous thin films of CuInTe 2 as well as bulk polycrystalline CuInTe 2 . Various vibrational modes exhibited by the bulk and polycrystalline thin films were attributed to those expected for single crystal CuInTe 2 . Raman spectra of amorphous films presented a broad spectrum, decomposition of which revealed the presence of elemental tellurium on the film surface. Laser-induced changes on CuInTe 2 thin films were studied by acquiring spectra with higher laser beam power. Modes due to tellurium appeared when the spectra were acquired during laser-sample interaction, indicating tellurium segregation. The Raman spectra measured from polycrystalline films during high laser power irradiation did not show decrease in the intensity of the A 1 mode of CuInTe 2 in spite of loss of tellurium from the lattice. This has been interpreted as related to an increased contribution from the undistorted subsurface CuInTe 2 region at higher excitation power.