Chromium compensated GaAs or GaAs:Cr sensors provided by the Tomsk State University (Russia) were characterized using the low noise, charge integrating readout chip JUNGFRAU with a pixel pitch of 75 × 75 µm2 regarding its application as an X-ray detector at synchrotrons sources or FELs. Sensor properties such as dark current, resistivity, noise performance, spectral resolution capability and charge transport properties were measured and compared with results from a previous batch of GaAs:Cr sensors which were produced from wafers obtained from a different supplier. The properties of the sample from the later batch of sensors from 2017 show a resistivity of 1.69 × 109 Ω/cm, which is 47% higher compared to the previous batch from 2016. Moreover, its noise performance is 14% lower with a value of (101.65 ± 0.04) e- ENC and the resolution of a monochromatic 60 keV photo peak is significantly improved by 38% to a FWHM of 4.3%. Likely, this is due to improvements in charge collection, lower noise, and more homogeneous effective pixel size. In a previous work, a hole lifetime of 1.4 ns for GaAs:Cr sensors was determined for the sensors of the 2016 sensor batch, explaining the so-called “crater effect” which describes the occurrence of negative signals in the pixels around a pixel with a photon hit due to the missing hole contribution to the overall signal causing an incomplete signal induction. In this publication, the “crater effect” is further elaborated by measuring GaAs:Cr sensors using the sensors from 2017. The hole lifetime of these sensors was 2.5 ns. A focused photon beam was used to illuminate well defined positions along the pixels in order to corroborate the findings from the previous work and to further characterize the consequences of the “crater effect” on the detector operation.
We show the developments carried out to improve the silicon sensor technology for the detection of soft X-rays with hybrid X-ray detectors. An optimization of the entrance window technology is required to improve the quantum efficiency. The LGAD technology can be used to amplify the signal generated by the X-rays and to increase the signal-to-noise ratio, making single photon resolution in the soft X-ray energy range possible. In this paper, we report first results obtained from an LGAD sensor production with an optimized thin entrance window. Single photon detection of soft X-rays down to 452 eV has been demonstrated from measurements, with a signal-to-noise ratio better than 20.
The charge-integrating hybrid silicon pixel detector JUNGFRAU has found widespread use at free-electron laser and synchrotron facilities. The detector was designed for use with hard X-rays; yet, because of its low noise, high dynamic range, position resolution, and scalable size, JUNGFRAU is of high interest for soft X-ray applications. We discuss improvements of the readout chip and alterations of the entrance window at the back of the sensor that facilitate low-energy X-ray detection. The first use case of the improved system at a low-energy beamline demonstrates single photon sensitivity down to 800 eV. At lower energies, the readout noise of the hybrid detector hinders the resolution of single photons. We propose to couple the JUNGFRAU readout chip with charge-multiplying low-gain avalanche diode (LGAD) sensors to resolve X-ray photons with a minimum energy of 250 eV.
Single-photon detection of X-rays in the energy range of 250 eV to 1 keV is difficult for hybrid detectors because of the low quantum efficiency and low signal-to-noise ratio. The low quantum efficiency is caused by the absorption of soft X-rays in the entrance window of the silicon sensors. The entrance window consists of an insensitive layer on the surface and a highly doped layer, which is typically from a few hundred nanometers to a couple of micrometers thick and is comparable to the absorption depth of soft X-ray photons (e.g. the attenuation length of 250 eV X-ray photons is ∼100 nm in silicon). The low signal-to-noise ratio is mainly caused by the small signal amplitude (e.g. ca. 70 electrons for 250 eV X-ray photons in silicon) with respect to the electronic noise. To improve the quantum efficiency, the entrance window must be optimized by minimizing the absorption of soft X-rays in the insensitive layer, and reducing charge recombination at the Si-SiO2 interface and in the highly doped region. Low gain avalanche diodes (LGADs) with a multiplication factor between 5 and 10 increase the signal amplitude and therefore improve the signal-to-noise ratio for soft X-rays, enabling single-photon detection down to 250 eV. Combining LGAD technology with an optimized entrance window technology can thus allow hybrid detectors to become a useful tool also for soft X-ray detection. In this work we present the optimization of the entrance window by studying the internal quantum efficiency of eight different process technology variations. The sensors are characterized using light emitting diodes with a wavelength of 405 nm. At this wavelength, the light has an absorption depth of 125 nm, equivalent to that of 276 eV X-rays. The best variation achieves an internal quantum efficiency of 0.992 for 405 nm UV light. Based on this study, further optimization of the quantum efficiency for soft X-rays detection is planned.
Speed, dynamic range, and radiation hardness make hybrid pixel detectors suitable image detectors for diffraction experiments. At synchrotrons and X-ray free electron lasers they are ubiquitous. However, for electron microscopy their spatial resolution is limited by multiple scattering in the sensor layer. In this paper we examine the use of two high Z sensor materials: CdTe and GaAs, as a way to mitigate this problem. The sensors were bonded to a JUNGFRAU readout chip which is a charge integrating hybrid pixel detector developed for use at X-ray free electron lasers. Using in-pixel gain switching, it can detect single particles down to 2 keV while maintaining a dynamic range of 120 MeV/pixel/frame. The characteristics of JUNGFRAU, besides being a capable detector, make it a good tool for sensor characterization since we can measure dark current and energy deposition per pixel. The high Z material shows better spatial resolution than silicon at 200 and 300 keV, however, their practical use with integrating detectors is still limited by material defects.
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