Articles you may be interested inRealization of In0.75Ga0.25As two-dimensional electron gas bilayer system for spintronics devices based on Rashba spin-orbit interaction J. Appl. Phys. 112, 113711 (2012); 10.1063/1.4766749 Molecular beam epitaxy of high mobility In 0.75 Ga 0.25 As for electron spin transport applications Growth-temperature optimization for low-carrier-density In 0.75 Ga 0.25 As -based high electron mobility transistors on InP Amounts of spontaneous spin splittings were estimated from low-temperature magnetoresistances in two-dimensional electron gases created at In 0.75 Ga 0.25 As/In 0.75 Al 0.25 As heterojunctions under a gate bias. Typical sheet electron densities and mobilities in the raw wafers were ϳ1.0ϫ10 12 /cm 2 and 2 -5ϫ10 5 cm 2 /V s at 1.5 K, respectively. A maximum spin-orbit coupling constant ␣ zero of ϳ30 (ϫ10 Ϫ12 eV m) was obtained for the van der Pauw sample. In gated Hall-bar samples, a decrease in the ␣ zero value with decreasing gate voltage (V g ) was first confirmed in a normal heterojunction. The main origin for such a large ␣ zero , which is a few times larger than any previously reported, was found to be a structure-dependent so-called interface contribution in the Rashba term.
A silicon atom irradiation technique is proposed to create high-density InGaSb quantum dots (QDs) on a GaAs substrate. This technique irradiates Si atoms immediately before InGaSb QD growth, and the density of QDs with Si atoms is about 100 times higher than that without Si atoms. The high-density InGaSb QDs show long-wavelength photo- and electroluminescence emissions around 1.3 and 1.5μm in the optical communications waveband. An Sb-based QD laser diode (LD) containing an InGaSb QD active layer was fabricated on a GaAs substrate. This Sb-based QD-LD shows a 1.37μm continuous-wave laser emission at room temperature.
Abstract:We study the shrinkage in acrylamide based photopolymer by measuring the Bragg detuning of transmission diffraction gratings recorded at different slant angles and at different intensities for a range of spatial frequencies. Transmission diffraction gratings of spatial frequencies 500, 1000, 1500 and 2000 lines/mm were recorded in an acrylamide based photopolymer film having 60 ± 5 μm thickness. The grating thickness and the final slant angles were obtained from the angular Bragg selectivity curve and hence the shrinkage caused by holographic recording was calculated. The shrinkage of the material was evaluated for three different recording intensities 1, 5 and 10 mW/cm 2 over a range of slant angles, while the total exposure energy was kept constant at 80 mJ/cm 2 . From the experimental results it can be seen that the shrinkage of the material is lower for recording with higher intensities and at lower spatial frequencies.
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