Initial growth stage of GaSb on Si(001) substrates with AlSb initiation layers

Effects of Ga-induced reconstructed surfaces and atomic steps on the morphology of GaSb islands on Si(100)

“…Moreover, III-V compound semiconductor QDs formed on Si substrates using direct heteroepitaxial growth are expected to have high luminescence properties due to the recombination of holes and electrons [4][5][6]. In particular, gallium antimonide (GaSb) semiconductor nanostructures on Si have been intensely studied owing to their applications as optical sources, such as near-infrared lasers and light-emitting diodes for optical communication [3,4,[7][8][9][10]. For high quantum efficiency, a technique for controlling the density and size of QDs is necessary.…”

Structural and optical characterization of GaSb layers on Si (001) substrates

“…Recently, the growths of Sb-based materials on Si (001) substrates using the AlSb buffer layers were reported by several groups [2][3][4]. In addition, its growth mechanism also has been investigated [5,6]. Balakrishnan et al proposed that for AlSb layers on Si (001), AlSb does not propagate the vertical defects due to the strong Al-Sb bond [5].…”

Solid phase epitaxy formation of silicon-GaSb based heterostructures

“…In addition, according to the molecular beam epitaxy (MBE) results GaSb islands formed on Si have a low concentration of about 10 8 cm -2 due to high diffusivity of Ga atoms on the silicon surface [3]. Another disadvantage of MBE is connected with high desorption rate of Sb during growth process; to overcome the problem a deposition usually performed under supersaturated Sb flux condition with Sb/Ga ratio up to 5 [4].…”