This paper presents a computational procedure to simulate the time-domain behavior of photoconductive antennas made of semiconductor and metal materials. Physical modeling of semiconductor devices at terahertz regime can be achieved by applying joint electronic and electromagnetic procedures, e.g., solving a coupled system of equations inferred from Poisson's drift-diffusion and Maxwell's equations. A set of discrete equations are derived by applying a combined finite-difference methodology for the previous steady-state and the finite-difference time-domain procedure for the transient regime. The results for the radiated electric field at broadside direction show good agreement with the experimental results previously reported in the literature.
We introduce a novel local time-stepping technique for marching-in-time algorithms. The technique is denoted as Causal-Path Local Time-Stepping (CPLTS) and it is applied for two time integration techniques: fourth order low-storage explicit Runge-Kutta (LSERK4) and second order Leapfrog (LF2). The CPLTS method is applied to evolve Maxwell's curl equations using a Discontinuous Galerkin (DG) scheme for the spatial discretization.Numerical results for LF2 and LSERK4 are compared with analytical solutions and the Montseny's LF2 technique. The results show that the CPLTS technique improves the dispersive and dissipative properties of LF2-LTS scheme.
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