In this article a study of the weak antilocalization effect in an InGaSb/InAlSb two-dimensional electron gas (2DEG) as a function of temperature is presented. Detailed information about the spin-splitting and transport parameters of the electronic system was obtained by fitting the model of Golub [L. E. Golub, Phys. Rev. B 71, 235310 (2005)] to the magnetoconductance data. A good agreement between the model and the experiment was achieved, taking into account only one of the k-linear spin-orbit coupling terms. Zero field spin-splitting energy was estimated to be of 1 meV.1 Introduction Recently, investigation of spin-dependent effects in the semiconductors became of great importance because of the rapid development of spin electronics. One of the major objectives is obtaining control over the spin in electronic devices. Thereupon arose an interest in semiconductor materials with pronounced spin-orbit interaction. Narrow band gap III-V compound semiconductors, in particular InSb and InSb-based ternary alloys, attracted especial interest because of the predicted strong spin-orbit interaction and furthermore because of the large effective g-factor, which is almost 100 times larger than the g-factor of GaAs [1].Magnetotransport measurements are a powerful tool for studying spin-dependent effects in semiconductors. In contrast to the analysis of the beating pattern in the Shubnikov-de Haas oscillations, the study of weak antilocalization (WAL) effect is an unambiguous indication of presence of spin-orbit interaction [2]. In this report we will focus on quantum corrections to the magnetoconductance around zero magnetic field in a two-dimensional electron gas (2DEG), based on an InGaSb/InAlSb heterostructure. We fitted the experimental data by a theoretical model and extracted characteristic scattering parameters, i.e. the phase coherence time τ φ and the spin relaxation time τ so .
Weak antilocalization was studied in an AlxGa1−xN/GaN two-dimensional electron gas as a function of temperature for various gate voltages. By fitting the weak antilocalization measurements by a theoretical model we found that the spin-orbit scattering length does not vary upon changing the carrier concentration or the temperature. The occurrence of spin-orbit coupling was attributed to the crystal inversion asymmetry. The presence of beating patterns observed in the Shubnikov-de Haas oscillations were not assigned to the presence of spin-orbit coupling but rather to structural inhomogeneities in the Al xGa1−xN/GaN crystal.
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