Suppression of weak antilocalization in anAlxGa1−xN∕GaNtwo-dimensio

Weak field magnetoresistance of narrow-gap semiconductor InSb

“…The anisotropy of weak antilocalization effect has been predicted 27 and observed [4][5][6][7] in quantum wells. The anisotropy has been systematically investigated in InGaAs and GaAlN quantum wells.…”

“…The anisotropy has been systematically investigated in InGaAs and GaAlN quantum wells. [4][5][6][7] To our best knowledge, it has not been studied in details in narrow-band semiconductor thin film systems. Here, we investigate this phenomenon in details.…”

“…In the second category the magnetoresistance curves in tilted magnetic field don't collapse into those in perpendicular field. This non-trivial anisotropy has been identified and systematically studied in quantum well systems, [4][5][6][7] MOSFET 8 and a few films. [9][10][11] Two mechanisms have been proposed as possible explanations for this anisotropy.…”

“…One is the random Berry phase induced by in-plane field-the roughness effect; 4,8 the other is a mixing of singlet and triplet Cooperon due to Zeeman coupling-the Zeeman mechanism. [4][5][6][7] There have been quite few researches concerning the anisotropy of magnetoresistance in thin films and the mostly anisotropy investigated is in pure weak localization effect. Some found that weak localization effect in perpendicular field is different from that in parallel field and in-plane field can even change the sign of weak field magnetoresistance.…”

“…Our results show that the anisotropy investigated in our InSb sample is different from that discovered in some quantum wells and films, in which the Zeeman effect has a strong influence on anisotropy of weak field magnetoresistance. [4][5][6][7][9][10][11] …”