The conductivity of hot electrons in narrow-gap alloy semiconductors at low temperatures is calculated in the extreme quantum limit assuming a displaced Maxwellian distribution. The model includes the non-equipartition of phonons and the Landau-level broadening due to electron impurity interactions. It is assumed that the energy relaxation of electrons is governed by the inelastic acoustic phonon scattering via deformation potential and the mobility is limited by the acoustic phonon, ionized impurity, and alloy disorder scattering. The effect of the modified free carrier screening due to magnetic quantization is considered. The magnetic and electric field dependences of the conductivity have also been investigated.
The energy loss rate of hot electrons due to longitudinal polar optical phonons in narrow-gap semiconductors is calculated for the longitudinal configuration with classical and quantum screening for various lattice temperatures. The results are used to examine the influence of quantum screening on the energy loss rate. A relative comparison of the effects of quantum and classical screening on the energy loss rate due to optical phonons is made. The energy loss rate without screening is compared with the energy loss rate with classical and quantum screening.
The small-signal mobility of hot electrons in narrow-bandgap semiconductors in t h e presence of a quantizing magnetic field at low temperatures has been investigated. The model includes the band non-parabolicity, nonequipartition of phonons and Landau level broadening due to electron impurity interactions. The carrier distribution function is considered to be drifted Maxwellian and the electrons are assumed to occupy t h e lowest Landau subband. Numerical results are obtained for n-Hg,&d,,,Te at low temperatures. The AC mobility is found to remain constant up to a certain frequency and then to decrease at higher frequencies. The phase lag between t h e drift velocity and the electric field increases with frequency.
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