Small-signal AC response of hot electrons in narrow-gap semiconductors in the extreme quantum limit at low temperatures

Abstract

The small-signal mobility of hot electrons in narrow-bandgap semiconductors in t h e presence of a quantizing magnetic field at low temperatures has been investigated. The model includes the band non-parabolicity, nonequipartition of phonons and Landau level broadening due to electron impurity interactions. The carrier distribution function is considered to be drifted Maxwellian and the electrons are assumed to occupy t h e lowest Landau subband. Numerical results are obtained for n-Hg,&d,,,Te at low temperatures. The AC mobility is found to remain constant up to a certain frequency and then to decrease at higher frequencies. The phase lag between t h e drift velocity and the electric field increases with frequency.