High transparent In2O3 and Cr-doped In2O3 (In2−xCrxO3) nanocrystalline thin films were prepared using a simple sol-gel method followed by a spin coating technique. The effect of Cr concentration on the structural, microstructure, electrical and optical properties of In2−xCrxO3 were systematically investigated using X-ray diffractometer (XRD), atomic force microscopy (AFM), UV-vis spectroscopy, field emission scanning electron microscopy (FESEM) and Hall effect technique. The films have good crystallization with preferred orientation to (2 2 2) direction. The lattice parameters, a, of In2O3 system increased at lowest dopants (x = 0.025) and decreased as the dopant was further increased. The optical transmittance of films increased up to 98% for x = 0.05 and decreased for further Cr concentrations. From AFM measurement the films nanocrystals morphology was depending on Cr concentrations. The band gap was around 3.76 eV for pure and with x ⩽ 0.075 however it increased. The effect of Cr concentrations on conducting mechanisms of In2O3 film has been investigated from 80 to 300 K using thermal activated conduction band and hopping models. The films, at x = 0.0-0.075, have typical semiconductor behaviour. Three different conducting mechanisms have been estimated. All thermal activation energies and conduction hopping parameters have been determined and analysed in details.

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In this study, nanosize Silicon and Carbon (Si+C) were reacted with MgB2 in order to enhance the critical current density. The polycrystalline bulks were synthesized by the direct in situ reaction method and their phase formation, crystal structure, and superconducting properties were evaluated. The enhanced relative peak intensity of Mg2Si and MgB4 indicates the formation of a large volume fraction of these two phases with increasing (Si+C) additions. The a-axis lattice parameter shrinks significantly while c-axis increases slightly. The estimated C doping level at B site increases, leading to a degradation of the superconducting transition temperature with increasing (Si+C) additions. By a reaction with (Si+C), the field dependence of critical current density is shown to enhance at both 5 K and 20 K.

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Problem statement: Microstructure of the grain will influence the properties of a polycrystalline manganites when different dopant is introduced. In this work, an effort had been made to investigate the influence of Ca, Ba and Sr substitution in La site. Approach: Polycrystalline manganites compound of La 0.67 A 0.33 MnO 3 where A = Ba, Sr and Ca had been prepared via conventional solid-state reaction method. The structure, microstructure, magnetic and electrical properties had been investigated using XRD, SEM, VSM and four-point probe techniques. Results: XRD spectrums showed that LBMO and LCMO were in single-phase orthorhombic structure whereas LSMO was rhombohedral structure. Scanning electron micrographs showed that LSMO had smaller average grain size as compared to LBMO. However, for LCMO, there was no clear grain boundary that can be observed and all the grains were well connected. The difference in the microstructure image might be due to the variance A-site cation that differs in grain growth. The Curie temperature, T c of LBMO and LSMO was 343.0 and 363.5 K, respectively. But the T c for LCMO was lower then 300 K. The T p for LCMO was 215 K while it was near or above 300K for LBMO and LSMO. All samples showed extrinsic Magnetoresistance (MR) effect. Higher MR was observed well below T c or T p where MR value increased monotonically with the decrease of temperature. This was associated with the different grain and grain boundary formation when different cation was substituted. LCMO displayed the highest low-field MR value (-15.82% at 0.2 T, 90 K) and high-field MR (-25.60% at 1 T, 300 K). Conclusion: Hence, electrical and magnetic transition temperature (T p and T c ) were affected by the average A-site cation radius.

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