Homogeneous nucleation of tungsten chemical vapor deposition (CVD) films on metallorganic (MO) CVD TiN substrates has been achieved by pretreating the substrate with SiH 4 at a wafer susceptor temperature of 425°C. Deposition of approximately a monolayer of silicon from the SiH 4 pretreatment results in continuous, uniform tungsten films less than 200 Å thick. Tungsten nucleation films grown on MOCVD TiN without a SiH 4 pretreatment were heterogeneous, with tungsten islands not coalescing into a continuous film until the thickness reached 400 Å. Experimental results are presented along with implications for use of tungsten CVD for vertical interconnects in high aspect ratio vias.
This work deals with the study of corrosion behaviour for zinc in (HNO3+ H2SO4) binary acid mixture containing ethanolamines. Corrosion rate increases with concentration of acid and temperature. At constant acid concentration, the inhibition efficiency of ethanolamines increases with the inhibitor concentration. Value of ΔGa increases and inhibition decreases with temperature. The mode of inhibition action appears to be chemisorption.
The impact of the HDP-CVD process on Si surfaces has been studied. It has been shown that the sputter component in the process enhances the features and the detection of Si surface defects. These defects, 0.16-0.30pm in size, are correlated to other characterization techniques such as capacitancevoltage measurements, plasma damage monitoring, and photoconductance decay spectroscopy. We show that these defects are a result of the interaction between the energetic ions in the deposition process and the crystal-originated voids during the Czochralski crystal growth. We show how these defects can be modulated among different processing conditions. The learning has been applied to optimizing the initial steps of plasma deposition in the HDP-CVD process for shallow trench isolation and pre-metal dielectric applications. This work also underscores the importance of applying low information content sensors to the early detection and control of plasma damage in high density plasma applications.
Introduction:HDP-CVD has been adopted by the semiconductor fabrication technology as the technique of choice for depositing oxide dielectric films especially at design rules of 0.25pm and below. This was primarily due to the ability of this technique to gap fill trenches with dimensions of 0.3pm and below with aspect ratios of 2 or more. In this technique, the plasma is sustained inductively using RF source power, while the bias is capacitively coupled. This gives HDP-CVD the ability to independently control the ion density and ion energy. With the application of bias, sputtering and deposition take place simultaneously. The sputter component helps keep the trench open while deposition takes place from the bottom up, thereby facilitating gap fill of trenches with very fine dimensions and large aspect ratios. While it is this bias component that makes gap fill possible and
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