Optical rectennas for infrared energy harvesting commonly incorporate metal/double-insulator/ metal diodes. Required diode characteristics include high responsivity and low resistance near zero bias with a sub-micron area, which have not been obtainable simultaneously. Diodes based on a new material set, Co/Co 3 O 4 /TiO 2 /Ti and an area of 0.071 lm 2 , provide a median maximum responsivity of 4.1 A/W, a median zero-bias responsivity of 1.2 A/W, and a median resistance of 14 kX. The highest performing diode has a maximum responsivity of 4.4 A/W, a zero-bias responsivity of 2.2 A/W, and a resistance of 18 kX. Published by AIP Publishing.
We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050 °C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1% and 10%, though it appears to be closer to 1% for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3×1014 and 1×1015 cm−2. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in the high B concentration layers.
Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron dopingsuperlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for subkeV B implants diffusion remains enhanced and xj is limited to 2100 nm at 105OOC. We term this enhancement, which arises in the presence of B atomic concentrations at the surface of 4%, Boron-Enhanced-Dimwn (BED).
The influence of ion mass on transient enhanced diffusion (TED) and defect evolution after ion implantation in Si has been studied by atomistic simulation and compared with experiments. We have analyzed the TED induced by B, P, and As implants with equal range and energy: TED increases with ion mass for equal range implants, and species of different mass but equal energy cause approximately the same amount of TED. Heavier ions produce a larger redistribution of the Si atoms in the crystal, leading to a larger excess of interstitials deeper in the bulk and an excess of vacancies closer to the surface. For high-mass ions more interstitials escape recombination with vacancies, are stored in clusters, and then contribute to TED. TED can be described in terms of an effective “+n” or “plus factor” that increases with the implanted ion mass.
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