The epitaxial growth of pentacene on hydrogen-terminated Si͑111͒ is reported. Reflection high energy electron diffraction ͑RHEED͒ revealed that the crystal packing resembles that in the bulk crystal even at a monolayer thickness, which was maintained in multilayers. A ripening effect was clearly observed by atomic force microscopy ͑AFM͒. These results are important to obtain oriented crystalline films of pentacene combined with silicon microdevices with reduced defect densities.
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