Continuous operation over 1500 h at 77 K has been achieved by use of a PbTe/Pb0.93Sn0.07Te double-heterostructure laser which was grown using the liquid-phase-epitaxy method. The cw threshold current changed only about 3% during the first 200 h. It is concluded that the lifetime of PbTe/PbSnTe double-heterostructure lasers at 77 K is fundamentally very long.
Concentration profiles of interstitial oxygen in silicon crystals were determined by scanning IR absorption using PbTe-Pb0.82Sn0.18Te semiconductor laser with the wavelength of 9.04±0.02 μm. IR beam was collimated to be 200 μm in diameter. Czochralski-grown crystals showed a local concentration fluctuation of about 1.8×1017 cm−3 from the average of 1.1×1018 cm−3. This fluctuation corresponds to an oxygen striation in the silicon crystal.
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