Crystal growth of Hg1−Cd Te using Te as a solvent

Ueda, Ryuichi; Ohtsuki, Osamu; Shinohara, K.; Ueda, Youiti

doi:10.1016/0022-0248(72)90539-8

Cited by 33 publications

(19 citation statements)

References 10 publications

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“…The results were 325.7 nm; a~ = 2.69(10-~), as = 1.50Pc~(atm), a~ = 1.18P.~(atrn) [13] 228.7 nm; a~ = 0.0236, as = 108Pc~(atm), aF = 4.60PH~(atm) [14] The foreign gas broadening coefficients were redetermined here using Hg-Cd amalgams as samples in a manner similar to that used previously (1) and described in detail elsewhere (5). The results are 325.7 nm; ar = (1.40 -+ 0.26)PHg(atm) [15] where 0.26 is one standard deviation and 228.7 nm; a~ = 8.89PHg 1-2' ~ -2.59PHglA~/Pcd~176 [16] With Eq. [16] for at, the standard deviation in the calculated and observed values of y' in the calibration runs is 4.6%.…”

Section: Calibration Measurementsmentioning

confidence: 99%

Partial Pressures over the Pseudobinary Solid Solution Hg1 − x Cd x Te ( s ) for x = 0.70 and 0.95 and over Four Te‐rich Ternary Melts

Liao

Brebrick

1985

J. Electrochem. Soc.

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The partial pressures of Hg, Cd, and Te2 have been determined between 420 ~ and 840~ from optical absorption measurements for four Te-rich compositions and for the Te-saturated solid solution (Hgl_xCd~)Te(s) with x = 0.70 and 0.95. In addition to further thermodynamically characterizing the melt, the former measurements yield ternary liquidus points. They also yield tie lines when combined with the present and previous measurements on Te-saturated solid solutions. These results, from an essentially steady-state technique, agree well with those of Harman. The measurements on the solid solutions yield values for the mixing quantities which are more accurate than our previous values. These are described well in terms of a quasi-regular solution of HgTe and CdTe components with an enthalpy of mixing of 1074 cal/g-atom and an excess entropy of mixing of 0.893 cal/K-g-atom at 50 mole percent CdTe.

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Section: Calibration Measurementsmentioning

confidence: 99%

Partial Pressures over the Pseudobinary Solid Solution Hg1 − x Cd x Te ( s ) for x = 0.70 and 0.95 and over Four Te‐rich Ternary Melts

Liao

Brebrick

1985

J. Electrochem. Soc.

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“…138 The shape of the growth interface varies with ampoule shape, ampoule lowering rate, and the temperature gradient in the furnace. 140 This paper also gives a part of the quasi-binary phase diagram at constant Hg/Cd ratios on the Te rich side of the diagram. The large separation between the liquidus and solidus curves (shown in Fig.…”

Section: B Crystal Growthmentioning

confidence: 99%

Narrow Gap Semiconductors

Harman¹,

Melngailis²

1974

Applied Solid State Science

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“…Because of the metallurgical characteristics of HgCdTe, such as the large gap between the solidus and liquidus in the CdTe-HgTe phase diagram, as well as the high mercury pressures that are developed by HgCdTe melts, it is very difficult to grow large, high quality HgCdTe crystals. A wide variety of techniques for growth from the liquid have been used to produce bulk crystals of Hg 1Àx Cd x Te, including the conventional Bridgman method [4,5] and ACRT-Bridgman [6], Solid State Recrystallization [7][8][9], the Travelling Heater Method [10][11][12] and the Slush method [13]. One of the fundamental aims of these studies is to decrease the growth temperature so as to reduce the high temperature growth defects that are endemic with high temperature growth.…”

Section: Introductionmentioning

confidence: 99%