The threshold voltage (V
th) of the p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) is investigated via Silvaco-Atlas simulations. The main factors which influence the threshold voltage of p-channel GaN MOSFETs are barrier height Φ
1,p, polarization charge density σ
b, and equivalent unite capacitance C
oc. It is found that the thinner thickness of p-GaN layer and oxide layer will acquire the more negative threshold voltage V
th, and threshold voltage |V
th| increases with the reduction in p-GaN doping concentration and the work-function of gate metal. Meanwhile, the increase in gate dielectric relative permittivity may cause the increase in threshold voltage |V
th|. Additionally, the parameter influencing output current most is the p-GaN doping concentration, and the maximum current density is 9.5 mA/mm with p-type doping concentration of 9.5 × 1016 cm−3 at V
GS = –12 V and V
DS = –10 V.
In this paper, dynamic characteristics of the single-crystal GaN-passivated lateral AlGaN/GaN Schottky barrier diodes (SBDs) treated with proton irradiation were investigated. Radiation-induced changes including idealized Schottky interface and slightly degraded on-resistance (RON) were observed with 10-MeV proton irradiation at fluences of 1014 cm-2. Benefited from the existing negative polarization charges induced at GaN/AlGaN interface, the dynamic on resistance (RON,dyn) showed negligible degradation after a 1000-s-long forward current stress of 50 mA for devices irradiated or not. Furthermore, the normalized RON,dyn increased by only 14% than the initial case after a 100-s-long bias of -600 V for the irradiated devices. The high-performance lateral AlGaN/GaN SBDs with tungsten as anode metal and in-situ single-crystal GaN as passivation layer show a great potential in the harsh radiation environment of space.
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