A gas sensor of common gas molecules, such as CO, H2O, NH3, O2, NO and NO2 on a WSe2 monolayer is investigated systematically by using first-principle calculations.
Using first-principle atomistic simulations, we focused on the electronic structures of small gas molecules (CO, HO, NH, NO, and NO) adsorbed on the S-vacancy SnS monolayer. The results show that HO and CO molecules were physisorbed on the S-vacancy SnS monolayer, whereas NH, NO, and NO molecules were chemisorbed on the S-vacancy SnS monolayer via strong covalent bonds. Moreover, our calculations show that HO and NH act as charge donors, whereas CO, NO, and NO gas molecules act as acceptors. Different adsorption behaviors of common gas molecules on the S-vacancy SnS monolayer provide a feasible way to exploit chemical gas sensors and electrical devices. In particular, our results also show that under applied biaxial strains, the adsorption energy and charge transfer of gas molecules on the S-vacancy SnS monolayer dramatically changed, which indicates that external factors on the S-vacancy SnS monolayer are highly preferred.
A memristor
architecture based on porous oxide materials has the
potential to be used in artificial synaptic devices. Herein, we present
a memristor system employing a karst-like hierarchically porous (KLHP)
silicon oxide structure with good stability and repeatability. The
KLHP structure prepared by an electrochemical process and thermal
oxidation exhibits high ON-OFF ratios up to 105 during
the endurance test, and the data can be maintained for 105 s at a small read voltage 0.1 V. The mechanism of lithium ion migration
in the porous silicon oxide structure has been discussed by a simulated
model. The porous silicon oxide-based memristor is very promising
because of the enhanced performance as well as easily accessed neuromorphic
computing.
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