Engineering current density over 5 kA mm −2 at 4.2 K, 14 T in thick film REBCO tapes To cite this article: Goran Majkic et al 2018 Supercond. Sci. Technol. 31 10LT01 View the article online for updates and enhancements. Related content Critical current density above 15 MA cm2 at 30 K, 3 T in 2.2 m thick heavily-doped (Gd,Y)Ba2Cu3Ox superconductor tapes V Selvamanickam, M Heydari Gharahcheshmeh, A Xu et al.-Sample and length-dependent variability of 77 and 4.2 K properties in nominally identical RE123 coated conductors L Rossi, X Hu, F Kametani et al.-Requirements to achieve high in-field critical current density at 30 K in heavilydoped (Gd,Y)Ba2Cu3Ox superconductor tapes V Selvamanickam, M Heydari Gharahcheshmeh, A Xu et al.-Recent citations Goran Majkic-Correlation of In-Field Performance of Thick REBCO Films Between 0-14 T and 4.2-77 K Goran Majkic et al-Effect of Deposition Temperature on Microstructure and Critical Current Properties of Zr-Doped GdYBCO Superconducting Tapes Made by MOCVD Ziming Fan et al

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An Advanced MOCVD (A-MOCVD) reactor was used to deposit 4.8 µm thick (Gd,Y)BaCuO tapes with 15 mol% Zr addition in a single pass. A record-high critical current density (Jc) of 15.11 MA/cm2 has been measured over a bridge at 30 K, 3T, corresponding to an equivalent (Ic) value of 8705 A/12 mm width. This corresponds to a lift factor in critical current of ~11 which is the highest ever reported to the best of author’s knowledge. The measured critical current densities at 3T (B||c) and 30, 40 and 50 K, respectively, are 15.11, 9.70 and 6.26 MA/cm2, corresponding to equivalent Ic values of 8705, 5586 and 3606 A/12 mm and engineering current densities (Je) of 7068, 4535 and 2928 A/mm2. The engineering current density (Je) at 40 K, 3T is 7 times higher than that of the commercial HTS tapes available with 7.5 mol% Zr addition. Such record-high performance in thick films (>1 µm) is a clear demonstration that growing thick REBCO films with high critical current density (Jc) is possible, contrary to the usual findings of strong Jc degradation with film thickness. This achievement was possible due to a combination of strong temperature control and uniform laminar flow achieved in the A-MOCVD system, coupled with optimization of BaZrO3 nanorod growth parameters.