InxGa1-xN nanowires (NWs) have attracted many interests as promising photocatalysts. In this article, InxGa1-xN nanowires were grown on a n-type Si (111) substrate by Ni-catalyzed chemical vapor deposition (CVD) method....
A hybrid structure of GaN/Ga2O3 microrods was fabricated on carbon cloth (CC) using a hydrothermal process combined with a high-temperature nitridation followed by an air annealing process. By elevating the...
To verify the working performance of the energy absorption device, CAE simulation software is used to simulate the working process of the energy absorption device. Firstly, the three-dimensional modeling software is used to establish the three-dimensional model of the energy absorption device, and then grid division software is used to divide the established three-dimensional model. Finally, the simulation calculation is carried out in the CAE simulation software. The results show that the speed of the high-speed stone with a diameter of 110mm is reduced from 22.3m/s to 10.2m/s under the action of the energy absorption device, and its energy is reduced by 81.5%. The working effect of the energy absorption device meets the expected requirements. This study provides a great reference value for the design of energy absorption devices.
In this article, a two-step anodization method was applied to tantalum foils to grow compact open-ended tantalum oxide nanotube arrays, which were subsequently subject to high temperature nitridation. The nitride nanotube arrays were characterized with SEM, XRD, and electrochemical tests including I-V and Mott-Schottky analysis. The phases in the nitrided nanotube arrays may consist of Ta3N5, TaN, TaN0.5, N-Ta2O, or the amorphous oxide. The duration of the second anodization step was found to play a key role on the microstructure and the carrier density of the nitride nanotube arrays. It is found that the duration of the second anodization has to be more than 20 min to obtain a specimen with a top layer of Ta3N5, which can work as a photo electrode or a template for the growth of photo catalyst nanomaterials.
Correction for ‘A hybrid GaN/Ga2O3 structure anchored on carbon cloth as a high-performance electrode of supercapacitors’ by Yan-Ling Hu, et al., Dalton Trans., 2022, https://doi.org/10.1039/d2dt02904a.
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