We have studied the effect of the chemical composition on the structure in the system Cr-Al-C by combinatorial thin film synthesis. Thin films with a laterally graded chemical composition were deposited using magnetron sputtering from elemental targets. By changing the Cr/C ratio from 1.72 to 3.48 and the Cr/Al ratio from 1.42 to 4.18 the formation of Cr 2 AlC, Cr 2 Al and Cr 23 C 6 phases was observed. Furthermore, based on X-ray diffraction a single phase Cr 2 AlC composition region is identified (Cr/C ratio between 1.72 and 1.93, Cr/Al ratio between 1.42 and 2.03) in the Cr-Al-C phase diagram. As the Cr/C ratio of 1.93 is increased the formation of Cr 2 Al and Cr 23 C 6 was observed in addition to Cr 2 AlC. Throughout the studied composition range the lattice parameters of Cr 2 AlC were independent of the chemical composition: a=2.865 ±0.007 +0.005 , c = 12.80 ±0.05 +0.08 . Furthermore, we find that a deviation from the stoichiometric composition of up to 6.3 at% for Al still results in the formation of a Cr 2 AlC single phase field. Possible pathways to accommodate the observed deviation from stoichiometry are discussed. The so-called M n+1 AX n phases (M is an early transition metal, A is an A-group element, and X is C and/or N and n=1±3) have recently attracted attention due to their unusual properties. [1] Generally speaking, they combine metallic behaviour such as good thermal and electrical conductivity, [2,3] plasticity, [4±7] excellent thermal shock resistance [2,4,8] with ceramic attributes for example high stiffness [9,10] and high temperature oxidation resistance. [4,11,12] While the Ti-Si-C system is comparatively well investigated with respect to synthesis, [2] properties, [1,2,4,13] and theory [3,10,14,15] only little is known about the Cr-Al-C system. Ab initio calculations of the structure [16] has been published and found to compare well with the structure measured for bulk samples [17] as well as for thin films grown by physical vapour deposition. [18] Furthermore, the solubility of stoichiometric Cr 2-x Ti x AlC and Cr 2-x V x AlC