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Short wave infrared (SWIR) devices have been fabricated using Rockwell's double layer planar heterostructure (DLPH) architecture with arsenic-ion implanted junctions. Molecular beam epitaxially grown HgCdTe/CdZnTe multilayer structures allowed the thin, tailored device geometries (typical active layer thickness was -3.5 Mm and cap layer thickness was -0.4 Mm) to be grown. A planar-mesa geometry that preserved the passivation advantages of the DLPH structure with enhanced optical collection improved the performance. Test detectors showed Band 7 detectors performing near the radiative limit (-3-5X below theory). Band 5 detector performance was -4-50X lower than radiative limited performance, apparently due to Shockley-Hall-Read recombination. We have fabricated SWIR HgCdTe 256 x 12 x 2 arrays of 45 ~tm x 45 ~m detector on 45 pm x 60 ~m centers and with cutoff wavelength which allows coverage of the Landsat Band 5 (1.5-1.75 ~tm) and Landsat Band 7 (2.08-2.35 Mm) spectral regions. The hybridizable arrays have four subarrays, each having a different detector architecture. One of the Band 7 hybrids has demonstrated performance approaching the radiative theoretical limit for temperatures from 250 to 295K, consistent with test results. D* performance at 250K of the best subarray was high, with an operability of -99% at 101~ cm Hz'2/W at a few mV bias. We have observed 1/f noise below 8E-17 AHz -1/2 at 1 Hz. Also for Band 7 test structures, Ge thin film diffractive microlenses fabricated directly on the back side of the CdZnTe substrate showed the ability to increase the effective collection area of small (nominally <20 Mm pm) planar-mesa diodes to the microlens size of 48 ~tm. Using microlenses allows array performance to exceed 1-D theory up to a factor of 5.
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