The relationships between extended defect evolution and boron diffusion in Si0.77Ge0.23 have been investigated. A SiGe structure was grown by molecular beam epitaxy with a 3×1018atoms∕cm3 boron marker layer positioned 0.50μm below the surface. Samples were ion implanted with 60 keV Si+ at a dose of 1×1014atoms∕cm2 and subsequently annealed at 750 °C for various times. The evolution of extended defects in the near surface region was monitored with plan-view transmission electron microscopy. Secondary ion mass spectroscopy concentration profiles facilitated the characterization of boron diffusion. Boron experiences transient enhanced diffusion regulated by the dissolution of dislocation loops. The maximum diffusion enhancement in Si0.77Ge0.23 is less than that observed in pure Si.
Si-implanted, unstrained Si1−xGex layers of various Ge concentrations ranging from 0% to 50% were grown by molecular beam epitaxy on top of a Si substrate. The samples were subjected to a 750 °C anneal for 180 min to explore the subsequent defect structure. Plan-view transmission electron microscopy was implemented to investigate the evolution of defects. The Si1−xGex samples with ⩽5% Ge exhibit {311} defect formation and dissolution, and these defects ripen throughout the course of the anneal. Increasing the Ge content has an adverse effect on the growth of {311} defects. The samples with Ge contents ⩾25% demonstrated only dislocation loop formation. Dislocation loop formation and the observed impedance of {311} defect growth is facilitated by increasing the Ge content due to the weak bonding associated with the Ge atoms.
The relaxation processes of strained silicon films on silicon-rich relaxed SiGe alloys have been studied. Experimental structures were generated via Molecular Beam Epitaxial (MBE) growth techniques and contain a strained silicon capping layer of approximately 50 nm. The relaxed SiGe alloy compositions range from 0 to 30 atomic% germanium. Samples received two distinct types of silicon implants. A 12 keV Si + implant at a dose of 1x10 15 atoms/cm 2 was used to generate an amorphous layer strictly confined within the strained Si cap. An alternate 60 keV Si + implant at a dose of 1x10 15 atoms/cm 2 was employed to create a continuous amorphous layer extending from the sample surface to a position 50 nm into the bulk SiGe material. The strain relaxation and regrowth processes are quantified through High Resolution X-Ray Diffraction (HRXRD) rocking curves and Cross-sectional Transmission Electron Microscopy (XTEM). The role of injected silicon interstitials upon the strain relaxation processes at the Si/SiGe interface after annealing at 600 o C is investigated.
As device lots become more and more expensive, process modeling is increasingly important. Process simulation and modeling is increasingly sophisticated but the accuracy remains a problem. There is generally a time lag between the introduction of a particular process and its accurate modeling – the problem of “yesterday's technology modeled tomorrow”. For many problems, absolute accuracy isn't required. Relative trends provide excellent information about the process in question. For this reason, process simulation is still a useful technique for guiding process development.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.