Strain Relaxation of Ion-implanted Strained Silicon on Relaxed SiGe

Crosby, Robert; Jones, K. S.; Law, Mark E.; Saavedra, Antonio F.; Hansen, J. L.; Larsen, A. Nylandsted; Liu, J.

doi:10.1557/proc-810-c4.12

Cited by 3 publications

(3 citation statements)

References 10 publications

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“…However, the volumetric strain is strongly dependent on the fraction ratio between Si and Ge. For instance, while x = 0.1 in Si/Si 1-x Ge x would result in a small volumetric strain of 2.28%, x = 0.3 could give a volumetric strain as high as 7.2% (i.e., [25]). We also point out that the simple assumption of volumetric strain is closely associated with the quantum wire and quantum dot growth modes in cubic semiconductors (i.e., [1]).…”

Section: Discussionmentioning

confidence: 99%

Atomistic calculation of elastic moduli in strained silicon

Zhu

Pan

Chung

et al. 2006

Semicond. Sci. Technol.

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Strained silicon is becoming a new technology in silicon industry where the novel strain-induced features are utilized. In this paper we present a molecular dynamic prediction for the elastic stiffnesses C 11 , C 12 and C 44 in strained silicon as functions of the volumetric strain level. Our approach combines basic continuum mechanics with the classical molecular dynamic approach, supplemented with the Stillinger-Weber potential. Using our approach, the bulk modulus, effective elastic stiffnesses C 11 , C 12 and C 44 of the strained silicon, including also the effective Young's modulus and Poisson's ratio, are all calculated and presented in terms of figures and formulae. In general, our simulation indicates that the bulk moduli, C 11 and C 12 , increase with increasing volumetric strain whilst C 44 is almost independent of the volumetric strain. The difference between strained moduli and those at zero strain can be very large, and therefore use of standard free-strained moduli should be cautious.

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Section: Discussionmentioning

confidence: 99%

Atomistic calculation of elastic moduli in strained silicon

Zhu

Pan

Chung

et al. 2006

Semicond. Sci. Technol.

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“…Previous studies have also employed rocking curves to study the strain relaxation observed in the strained silicon capping layer using pseudomorphic Si/Si 1Àx Ge x structures [11,12]. However, further investigation determined space maps to be a preferable technique for the measurement of annealed samples.…”

Section: Experimental Designmentioning

confidence: 99%

HRXRD studies of strain relaxation in ion-implanted strained Si on relaxed Si1−xGex

Phen¹,

Crăciun²,

Jones³

et al. 2006

Nuclear Instruments and Methods in Physics Research Section B:

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“…2,3 Ion implantation creates point defects, which act as nucleation sites for relaxation induced dislocation or aid in the inter-diffusion of Boron and Ge, resulting in accelerated strain relaxation. [4][5][6] This leads to a lower hole mobility and higher junction leakage therefore degrading device performance.…”

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confidence: 99%

Alleviating eSiGe Strain Relaxation Using Cryo-Implantation

Yang

Lin

et al. 2011

Electrochem. Solid-State Lett.

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SiGe/Si hetero structure has been examined using high resolution x-ray diffraction for strain and cross sectional transmission electron microscopy for implant induced defects with various p-type source drain implant conditions at room or cryogenic temperature. The implant induced end-of-range defects can be reduced by optimizing Ge pre-amorphization implant energy and at cryogenic temperature. The alleviated strain relaxation and lower junction leakage current are correlated to the cryo-implant defect reduction.For strained channel p-type metal-oxide-semiconductor (pMOS) devices, a uniaxial compressive stress in the channel is induced by the selective epitaxial growth (SEG) of embedded SiGe (eSiGe) in recessed source/drain (S/D) regions. Higher channel stress levels and lower SD resistance can be achieved by increasing the Ge content and the epilayer thickness in the S/D regions. 1 To be fully incorporated into Complimentary MOS (or CMOS) technology, these SiGe/Si layers will experience and have to withstand further processing steps, i.e. ion implantation and annealing. It is known that the subsequent spike rapid thermal process (sRTP) and Laser millisecond (msec) anneal could relax the strain by forming misfit and threading dislocations as lattices re-grown and dopants activated. 2, 3 Ion implantation creates point defects, which act as nucleation sites for relaxation induced dislocation or aid in the inter-diffusion of Boron and Ge, resulting in accelerated strain relaxation. 4-6 This leads to a lower hole mobility and higher junction leakage therefore degrading device performance.The evolution of end-of-range (EOR) defects and amorphization as a function of implant temperature have been reported previously. 7,8 The dynamic annealing process of interstitials and vacancies, generated by the implant, can be retarded by applying cryo temperature on substrate, resulting in deeper amorphization and smoother amorphous and crystal (a/c) interface layers. Cryo implants are well known to reduce Boron diffusion and activation anomalies. 7,9,10 In this paper, eSiGe SD integrated in state-of-the-art 28 nm CMOS flow is studied for strain relaxation. The strain is characterized with high resolution x-ray diffraction (HRXRD) rocking curves. The defects are examined with cross sectional transmission electron microscopy (XTEM) and correlated to the junction leakage. The modulation of injected silicon interstitial on the strain relaxation processes at the SiGe/Si interface after 1015 • C sRTP and 1250 • C Laser msec annealing, coupled with cryo temperature pMOS source and drain (PSD) implants, are investigated. The cryo-implants were conducted at −100 • C. The junction leakage related to the defect propagated from SiGe layer to Si substrate after msec anneal are discussed.The recessed SiGe S/D junction was fabricated and integrated with 28 nm device flow. 11 SiGe on Si substrate was epitaxial-grown (EPI) by low pressure chemical vapor deposition. The p/n junction was formed by in-situ doped SiGe EPI and followed with PSD implant...

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Strain Relaxation of Ion-implanted Strained Silicon on Relaxed SiGe

Cited by 3 publications

References 10 publications

Atomistic calculation of elastic moduli in strained silicon

Atomistic calculation of elastic moduli in strained silicon

HRXRD studies of strain relaxation in ion-implanted strained Si on relaxed Si1−xGex

Alleviating eSiGe Strain Relaxation Using Cryo-Implantation

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