In this paper, a four-terminal piezoresistive sensor commonly known as a van der Pauw (VDP) structure is presented for its application to MEMS pressure sensing. In a recent study, our team has determined the relation between the biaxial stress state and the piezoresistive response of a VDP structure by combining the VDP resistance equations with the equations governing silicon piezoresistivity and has proposed a new piezoresistive pressure sensor. It was observed that the sensitivity of the VDP sensor is over three times higher than the conventional filament type Wheatstone bridge resistor. To check our theoretical findings, we fabricated several (100) silicon diaphragms with both the VDP sensors and filament resistor sensors on the same wafer so both the sensor elements have same doping concentration. Several diaphragms had VDP sensors of different sizes and orientations to find out their geometric effects on pressure sensitivity. The diaphragms were subjected to known pressures, and the pressure sensitivities of both types of sensors were measured using an in-house built calibration setup. It was found that the VDP devices had a linear response to pressure as expected, and were more sensitive than the resistor sensors. Also, the VDP sensors provided a number of additional advantages, such as its size independent sensitivity and simple fabrication steps due to its simple geometry.
This paper characterizes a piezoresistive sensor under variations of both size and orientation with respect to the silicon crystal lattice for its application to MEMS pressure sensing. The sensor to be studied is a four-terminal piezoresistive sensor commonly referred to as a van der Pauw (VDP) structure. In a recent study, our team has determined the relation between the biaxial stress state and the piezoresistive response of a VDP structure by combining the VDP resistance equations with the equations governing silicon piezoresistivity and has proposed a novel piezoresistive pressure sensor. It is observed that the sensitivity of the VDP sensor is over three times higher than the conventional filament type Wheatstone bridge resistor. With MEMS devices being used in applications which continually necessitate smaller size, characterizing the effect of relative size and misalignment on the sensitivity of the VDP sensor is important. It is determined that the performance of the sensor is strongly dependent only on the longitudinal position of the sensor on the diaphragm, and is relatively tolerant of other errors in the manufacturing process such as transverse position, sensor depth, and orientation angle.
In this paper, we presented is a four-terminal piezoresistive sensor commonly referred to as a van der Pauw (VDP) structure for its application to MEMS pressure sensing. In a recent study, our team has determined the relation between the biaxial stress state and the piezoresistive response of a VDP structure by combining the VDP resistance equations with the equations governing silicon piezoresistivity and has proposed a new piezoresistive pressure sensor. It was observed that the sensitivity of the VDP sensor is over three times higher than the conventional filament type Wheatstone bridge resistor. To check our theoretical findings, we fabricated several (100) silicon diaphragms with both the VDP sensors and filament resistor sensors on the same wafer so both the sensor elements have same doping concentration. The diaphragms were subjected to known pressures, and the pressure sensitivities of both types of sensors were measured using an in-house built calibration setup. It was found that the VDP devices had a linear response to pressure as expected, and were more sensitive than the resistor sensors. Also, the VDP sensors provided a number of additional advantages, such as its size independent sensitivity and simple fabrication steps due to its simple geometry.
In our specific application of the van der Pauw (VDP) structure as a pressure sensor, where the stress field varies significantly, smaller VDP size is beneficial. The resistivity of the VDP sensor is affected by the stress state of the entire area over which it lies, providing a relation between resistance and the average stress in an area, rather than the stress at a point. The further the area over which the VDP lies is reduced, the closer we approximate the stress at a point rather than the average stress over a large surface. Due to microfabrication and other limitations, small, point-like sensors may not be feasible. In our study, a clear relationship between size and sensitivity could not be made. However, it was apparent that size had little overall effect on sensitivity. In testing the VDP devices for comparison with conventional sensor types, it was found that the VDP devices had a linear response as expected, were the most sensitive, and provided a number of additional advantages. Specifically, the VDP device allows for significant miniaturization, because its resistance value is independent of size, and the measurement technique is independent of line resistance. The simple geometry of the VDP also simplifies fabrication.
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