No abstract

Alumina has been joined at 1150°C and 1400°C using multilayer copper/niobium/copper interlayers. Four-point bend strengths are sensitive to processing temperature, bonding pressure, and furnace environment (ambient oxygen partial pressure). Under optimum conditions, joints with reproducibly high room temperature strengths (≈240 ± 20 MPa) can be produced; most failures occur within the ceramic. Joints made with sapphire show that during bonding an initially continuous copper film undergoes a morphological instability, resulting in the formation of isolated copper-rich droplets/particles at the sapphire/interlayer interface, and extensive regions of direct bonding between sapphire and niobium. For optimized alumina bonds, bend tests at 800°C-1100°C indicate significant strength is retained; even at the highest test temperature, ceramic failure is observed. Postbonding anneals at 1000°C in vacuum or in gettered argon were used to assess joint stability and to probe the effect of ambient oxygen partial pressure on joint characteristics. Annealing in vacuum for up to 200 h causes no significant decrease in room temperature bend strength or change in fracture path. With increasing anneal time in a lower oxygen partial pressure environment, the fracture strength decreases only slightly, but the fracture path shifts from the ceramic to the interface. Cu/Nb/Cu Interlayers R. A. Marks et al. Joining of Alumina via

No abstract

Alumina has been joined at 1400°C using niobium-based interlayers. Two different joining approaches were compared: solid-state diffusion bonding using a niobium foil as an interlayer, and liquid-film assisted bonding using a multilayer copper/niobium/copper interlayer. In both cases, a 127-µm thick niobium foil was used; ≈1.4-µm or ≈3-µm thick copper films flanked the niobium. Room-temperature four-point bend tests showed that the introduction of a copper film had a significant beneficial effect on the average strength and the strength distribution. Experiments using sapphire substrates indicated that during bonding the initially continuous copper film evolved into isolated copper-rich droplets/particles at the sapphire/interlayer interface, and extensive regions of direct bonding between sapphire and niobium. Film breakup appeared to initiate at either niobium grain boundary ridges, or at asperities or irregularities on the niobium surface that caused localized contact with the sapphire.