Using non-c-plane bulk GaN substrates, we demonstrate continuous-wave single-mode blue-emitting laser diodes operating with over 23% wall plug efficiency and over 750 mW output power, which represent the highest values reported to date. Furthermore, we demonstrate continuous-wave 520 nm green-emitting laser diodes with over 60 mW output power and 1.9% wall plug efficiency. The rapid performance evolution of laser diodes fabricated on non-c-plane orientations is validation of the benefits resulting from increased electron–hole overlap, reduced effective hole mass, and increased design flexibility.
We present new advances in green, blue, and violet InGaN-based laser diodes fabricated on nonpolar and semipolar GaN substrates. Using these novel crystal orientations, we report high power, high efficiency, continuous-wave operation from single-lateral-mode electrically pumped laser diodes at wavelengths from 405 nm to 500 nm. Additionally, we present continuous-wave lasing demonstrations out to 523 nm, representing the longest continuous-wave green laser emission reported to date. Wall-plug efficiencies of over 25% in the violet region, 16.2% in the blue region, and 2.2% in the 500 nm range are presented. These InGaN-based devices offer dramatic improvement in size, weight, and cost over conventional gas or solid state lasers and may enable a variety of new applications in defense, biomedical, industrial, and consumer projection displays.
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