High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes

Raring, J.W.; Hall, E.; Schmidt, Mathew C.; Poblenz, C.; Li, Ben; Pfister, Nick; Feezell, Daniel; Craig, Richard R.; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji

doi:10.1117/12.840783

Cited by 27 publications

(11 citation statements)

References 11 publications

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“…Soon after, the lasing wavelength was extended to 507 nm with a CW demo in June, 2009. In December of 2009, Soraa demonstrated a CW laser operating at 523 nm in [11] and extended the wavelength to 525 nm in February, 2010, which represented the longest CW wavelength reported at that date. With successful demonstration of a sufficient wavelength for defense and display applications, Soraa's focus turned to improving the WPE and lifetime of green lasers in the 520-530 nm range.…”

Section: Green Laser Diodesmentioning

confidence: 93%

High-performance blue and green laser diodes based on nonpolar/semipolar GaN substrates

Schmidt

Poblenz

Chang

et al. 2011

Laser Technology for Defense and Security VII

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We present breakthrough performance from green and blue InGaN-based laser diodes fabricated on nonpolar/semipolar substrates. High-power, high-efficiency, and long-lifetime continuous-wave laser operation is demonstrated using these novel crystal orientations. For green wavelengths at 520 nm, we report on continuous wave single mode lasing with75 mW of output power and wall plug efficiencies over 2.3%. In the blue regime we describe single-mode lasers operating with over 23% wall plug efficiency and with output powers greater than 750 mW. These InGaN-based direct-diode lasers offer significant improvement in performance, size, weight, and cost over conventional gas and solid state lasers. Furthermore, these devices exhibit robust operation over a broad temperature range, can be directly modulated and do not contain harmful residual infrared radiation typical of second harmonic generation lasers. These characteristics are salient considerations for such optical devices in battlefield and other security applications.

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Section: Green Laser Diodesmentioning

confidence: 93%

High-performance blue and green laser diodes based on nonpolar/semipolar GaN substrates

Schmidt

Poblenz

Chang

et al. 2011

Laser Technology for Defense and Security VII

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“…Soon after, the lasing wavelength was extended to 507 nm with a CW demo in June, 2009. In December of 2009, Soraa demonstrated a CW laser operating at 523 nm in [1] and extended the wavelength to 525 nm in February, 2010, which represented the longest CW wavelength reported at that date. With successful demonstration of a sufficient wavelength for display applications, Soraa's focus turned to improving the WPE and lifetime of green lasers in the 520-530nm range.…”

Section: Green Laser Diodesmentioning

confidence: 93%

“…In the green wavelength regime we demonstrate continuous-wave (CW) single-mode laser diodes with wall-plug efficiencies (WPE) of over 2% and output powers over 65 mW at 520nm. This increase in efficiency represents a 20X improvement in the past year [1]. In the blue regime we demonstrate single-mode laser diodes with wall-plug efficiencies of over 23% and projected lifetimes of 10,000 hrs.…”

Section: Introductionmentioning

confidence: 91%

High-performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates

et al. 2011

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We present state-of-the-art performance from green and blue InGaN-based laser diodes fabricated on nonpolar/semipolar substrates. Using these novel crystal orientations, we demonstrate high-power, high-efficiency, and long-lifetime continuous-wave laser operation. For green wavelengths at 520 nm, we report on continuous wave single mode lasing with over 65 mW of output power and wall plug efficiencies over 2%. In the blue regime we describe single-mode lasers operating with over 23% wall-plug-efficiency and with output powers greater than 750 mW. To the best of the author's knowledge, this efficiency represents the highest reported to date for a single-mode blue laser. These InGaNbased devices offer dramatic improvement in performance, size, weight, and cost over conventional gas and solid state lasers for use in defense, biomedicine, and consumer projection displays.

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“…In spite of significant progress in the development of direct-emitting green InGaN laser diodes (LDs) grown on free-standing GaN substrates (l ¼ 523 -525 nm, CW operation mode, output power of 38 -50 mW, WPE of 2.2 -2.3%) [1,2], alternative ways to obtain semiconductor green lasers are still of great importance because the InGaN LDs demonstrate rather high threshold current density (J th 9 kA/cm 2 [2]) steeply increasing with l.…”

mentioning

confidence: 99%

Violet-green electrically pumped laser converters with output power over 150 mW

Sorokin¹,

Sedova²,

Gronin³

et al. 2012

Electron. Lett.

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A violet-green integrated laser converter with a quantum efficiency up to 25.4% and maximum output pulse power of 154 mW at a wavelength of 543 nm has been fabricated on the basis of the II-VI laser heterostructure comprising an active region with five electronicallycoupled CdSe/ZnSe quantum dot sheets embedded in a Zn(Mg)SSe/ZnSe superlattice graded-index waveguide. A pulse InGaN/GaN laser diode emitting at 416 nm was used as a pumping source of the laser converter.Introduction: Compact semiconductor green lasers (l 530 -550 nm) are strongly demanded for the fabrication of low-cost, high resolution pico-projectors which can be incorporated in smartphones, digital cameras, media players, laptops etc. In spite of significant progress in the development of direct-emitting green InGaN laser diodes (LDs) grown on free-standing GaN substrates (l ¼ 523 -525 nm, CW operation mode, output power of 38 -50 mW, WPE of 2.2 -2.3%) [1,2], alternative ways to obtain semiconductor green lasers are still of great importance because the InGaN LDs demonstrate rather high threshold current density (J th 9 kA/cm 2 [2]) steeply increasing with l.One of the alternative approaches has been the blue-green laser converter composed of a high-efficiency Cd(Zn)Se/ZnMgSSe laser heterostructure optically pumped by the emission of a blue-violet III-N laser, which was proposed and realised in our early works [3,4], where the completely optical design was employed. To realise the next generation of converters using blue-violet III-N LDs as pumping sources two essential obstacles should be overcome. First, the threshold power density of II-VI laser heterostructures has to be reduced via structure design and growth optimisation, and, secondly, high-power blue-violet III-N LDs or high-brightness LEDs should appear on the market, which, in turn, is governed by the progress in III-N LD technology.Recently, utilising II-VI laser heterostructures of conventional design [4], but containing five electronically coupled CdSe/ZnSe quantum dot (QD) planes instead of two, allowed us to achieve the pulse output power in green of 65 mW and the quantum conversion efficiency of 8% for the converter pumped by a commercial blue-violet LD (l exc ¼ 416 nm) [5]. The threshold pulse power in that case was 0.65-0.7 W. This Letter reports on the next step in the realisation of high-efficiency violet-togreen electrically pumped laser converters based on the optimised II-VI laser heterostructures with a superlattice (SL) graded-index waveguide (GIW), which demonstrated significantly reduced threshold power density P th 1.5 kW/cm 2 [6].

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High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes

Cited by 27 publications

References 11 publications

High-performance blue and green laser diodes based on nonpolar/semipolar GaN substrates

High-performance blue and green laser diodes based on nonpolar/semipolar GaN substrates

High-performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates

Violet-green electrically pumped laser converters with output power over 150 mW

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