We present an axisymmetric computational model to study the heating processes of gold nanoparticles, specifically nanorods, in aqueous medium by femtosecond laser pulses. We use a two-temperature model for the particle, a heat diffusion equation for the surrounding water to describe the heat transfer processes occurring in the system, and a thermal interface conductance to describe the coupling efficiency at the particle/water interface. We investigate the characteristic time scales of various fundamental processes, including lattice heating and thermal equilibration at the particle/surroundings interface, the effects of multiple laser pulses, and the influence of nanorod orientation relative to the beam polarization on energy absorption. Our results indicate that the thermal equilibration at the particle/water interface takes approximately 500 ps, while the electron-lattice coupling is achieved at approximately 50 ps when a 48×14 nm gold nanorod is heated to a maximum temperature of 1270 K with the application of a laser pulse having 4.70 J/m(2) average fluence. Irradiation by multiple pulses arriving at 12.5 ns time intervals (80 MHz repetition rate) causes a temperature increase of no more than 3 degrees during the first few pulses with no substantial changes during the subsequent pulses. We also analyze the degree of the nanorods' heating as a function of their orientation with respect to the polarization of the incident light. Lastly, it is shown that the temperature change of a nanorod can be modeled using its volume equivalent sphere for femtosecond laser heating within 5-15% accuracy.

We present experimental results for the plasmonic laser ablation of silicon with nanoscale features as small as 22 x 66 nm using single near-infrared, femtosecond laser pulses incident on gold nanorods. Near the ablation threshold, these features are photo-imprints of gold nanorod particles positioned on the surface of the silicon and have feature sizes similar to the nanorods. The single rod-shaped ablation pattern matches the enhancement patterns of the Poynting vector magnitude on the surface of silicon, implying that the ablation is a result of the plasmonic enhancement of the incident electromagnetic waves in the near-field of the particles. Interestingly, the ablation pattern is different from the two separated holes at the ends of the nanorod, as would be expected from the electric field--|E|(2) enhancement pattern. We measured the plasmonic ablation threshold fluence to be almost two orders of magnitude less than the femtosecond laser ablation threshold of silica, present in the thin native oxide layer on the surface of silicon. This value also agrees with the enhancement of the Poynting vector of a nanorod on silicon as calculated with electromagnetic simulations. We thus conclude that plasmonic ablation with plasmonic nanoparticles depends directly on the polarization and the value of the near-field enhancement of the Poynting vector and not the square of the electric field as previously suggested.

A sensitive optical detector is presented based on a deeply depleted graphene-insulator-semiconducting (D2GIS) junction, which offers the possibility of simultaneously leveraging the advantages of both charge integration and localized amplification. Direct read-out and built-in amplification are accomplished via photogating of a graphene field-effect transistor (GFET) by carriers generated within a deeply depleted low-doped silicon substrate. Analogous to a depleted metal-oxide-semiconducting junction, photo-generated charge collects in the potential well that forms at the semiconductor/insulator interface and induces charges of opposite polarity within the graphene film modifying its conductivity. This device enables simultaneous photo-induced charge integration with continuous “on detector” readout through use of graphene. The resulting devices exhibit responsivities as high as 2,500 A/W (25,000 S/W) for visible wavelengths and a dynamic range of 30 dB. As both the graphene and device principles are transferrable to arbitrary semiconductor absorbers, D2GIS devices offer a high-performance paradigm for imaging across the electromagnetic spectrum.

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Abstract. The solar spectrum varies with atmospheric conditions and composition, and can have significant impacts on the output power performance of each junction in a concentrating solar photovoltaic (CPV) system, with direct implications on the junction that is current-limiting. The effect of changing solar spectrum on CPV module power production has previously been characterized by various spectral performance parameters such as air mass (AM) for both single and multi-junction module technologies. However, examinations of outdoor test results have shown substantial uncertainty contributions by many of these parameters, including air mass, for the determination of projected power and energy production. Using spectral data obtained from outdoor spectrometers, with a spectral range of 336nm-1715nm, this investigation examines precipitable water (PW), aerosol and dust variability effects on incident spectral irradiance. This work then assesses air mass and other spectral performance parameters, including a new atmospheric component spectral factor (ACSF), to investigate iso-cell, stacked multijunction and single-junction c-Si module performance data directly with measured spectrum. This will then be used with MODTRAN5 ® to determine if spectral composition can account for daily and seasonal variability of the short-circuit current density J sc and the maximum output power P mp values. For precipitable water, current results show good correspondence between the modeled atmospheric component spectral factor and measured data with an average rms error of 0.013, for all three iso-cells tested during clear days over a one week time period. Results also suggest average variations in ACSF factors with respect to increasing precipitable water of 8.2%/cmH 2 O, 1.3%/cmH 2 O, 0.2%/cmH 2 O and 1.8%/cmH 2 O for GaInP, GaAs, Ge and c-Si cells, respectively at solar noon and an AM value of 1.0. For ozone, the GaInP cell had the greatest sensitivity to increasing ozone levels with an ACSF variation of 0.07%/cmO 3 . For the desert dust wind study, consistent ACSF behavior between all iso-cells and c-Si was found, with only significant reductions beyond 40mph.