Though tungsten trioxide (WO3) in bulk, nanosphere, and thin film samples has been extensively studied, few studies have been dedicated to the crystallographic structure of WO3 thin films. In this work, the evolution from amorphous WO3 thin films to crystalline WO3 thin films is discussed. WO3 thin films were fabricated on silicon substrates (Si/SiO2) by RF reactive magnetron sputtering. Once a thin film was deposited, two successive annealing treatments were made: an initial annealing at 400 °C for 6 h was followed by a second annealing at 350 °C for 1 h. Film characterization was carried out by X-ray diffraction (XRD), high-resolution electron transmission microscopy (HRTEM), scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques. The β-WO3 final phase grew in form of columnar crystals and its growth plane was determined by HRTEM.
Magnetocaloric materials with second order phase transition near the Curie temperature can be described by critical phenomena theory. In this theory, scaling, universality, and renormalization are key concepts from which several phase transition order criteria are derived. In this work, the rescaled universal curve, Banerjee and mean field theory criteria were used to make a comparison for several magnetocaloric materials including pure Gd, SmCo1.8Fe0.2, MnFeP0.46As0.54, and La0.7Ca0.15Sr0.15MnO3. Pure Gd, SmCo1.8Fe0.2, and La0.7Ca0.15Sr0.15MnO3 present a collapse of the rescaled magnetic entropy change curves into a universal curve, which indicates a second order phase transition; applying Banerjee criterion to H/σ vs σ2 Arrot plots and the mean field theory relation |ΔSM| ∝ (μ0H/Tc)2/3 for the same materials also determines a second order phase transition. However, in the MnFeP0.46As0.54 sample, the Banerjee criterion applied to the H/σ vs σ2 Arrot plot indicates a first order magnetic phase transition, while the mean field theory prediction for a second order phase transition, |ΔSM| ∝ (μ0H/Tc)2/3, describes a second order behavior. Also, a mixture of first and second order behavior was indicated by the rescaled universal curve criterion. The diverse results obtained for each criterion in MnFeP0.46As0.54 are apparently related to the magnetoelastic effect and to the simultaneous presence of weak and strong magnetism in Fe (3f) and Mn (3g) alternate atomic layers, respectively. The simultaneous application of the universal curve, the Banerjee and the mean field theory criteria has allowed a better understanding about the nature of the order of the phase transitions in different magnetocaloric materials.
In order to understand the effect of the interface on the spin pumping and magnetic proximity effects, high resolution transmission electron microscopy and ferromagnetic resonance (FMR) were used to analyze Py/Pt bilayer and Pt/Py/Pt trilayer systems. The samples were deposited by dc magnetron sputtering at room temperature on Si (001) substrates. The Py layer thickness was fixed at 12 nm in all the samples and the Pt thickness was varied in a range of 0-23 nm. A diffusion zone of approximately 8 nm was found in the Py/Pt interfaces and confirmed by energy dispersive X-ray microanalysis. The FMR measurements show an increase in the linewidth and a shift in the ferromagnetic resonance field, which reach saturation. V C 2015 AIP Publishing LLC.
A single crystal with a nominal composition FeSe0.5Te0.5 was obtained by the Bridgman method. A quartz ampulla with the sample inside was vacuum-sealed and maintained at 1050 °C for 37 h to homogenize the sample. Subsequently, the quartz ampulla with the sample was moved with a speed of 2.2 mm/h to a furnace which was at 450 °C. X-ray diffraction confirmed the tetragonal structure of the grown single crystal with the cleavage plane corresponding to the ab plane. Resistance measurements were carried out with magnetic fields from 0 to 9 T, applied parallel to the c axis and ab plane, respectively. A zero-field critical temperature Tc = 14 K was determined. The upper critical field vs. temperature phase diagram was built for temperatures where the resistance drops to 90%, 50%, and 10% of the normal state resistance. The linear extrapolation to T = 0 K gave upper critical fields of 57.2, 51.8, and 46.0 T for Hǁc axis and 109.6, 95.5, and 80.9 T for Hǁab. Applying the Werthamer–Helfand–Hohenberg (WHH) theory, upper critical fields of 39.6, 35.9, and 31.8 T and coherence lengths of 28.8, 30.3, and 32.1 Å were obtained for Hǁc; while for Hǁab, upper critical fields of 51.3, 40.7, and 37.5 T and coherence lengths of 22.3, 26.7, and 31.5 Å were obtained. The value of μ0Hc2/kBTc calculated by the WHH theory exceeds the Pauli limit (1.84 T/K) indicating the unconventional nature of superconductivity. The activation energy U0 has two different rates of change with the applied magnetic field probably due to two different thermal activation mechanisms; the origin of which requires further investigation. A similar behavior is observed in the irreversibility lines.
The effect of native defects originated by a non-stoichiometric variation of composition in CoSb3 on I-V curves and Hall effect was investigated. Hysteretic and a non-linear behavior of the I-V curves at cryogenic temperatures were observed; the non-linear behavior originated from the Poole-Frenkel effect, a field-dependent ionization mechanism that lowers Coulomb barriers and increases emission of charge carriers, and the hysteresis was attributed to the drastic decrease of specific heat which produces Joule heating at cryogenic temperatures. CoSb3 is a narrow gap semiconductor and slight variation in the synthesis process can lead to either n- or p-type conduction. The Sb-deficient CoSb3 presented an n-type conduction. Using a single parabolic model and assuming only acoustic-phonon scattering the charge transport properties were calculated at 300 K. From this model, a carrier concentration of 1.18 × 1018 cm−3 and a Hall factor of 1.18 were calculated. The low mobility of charge carriers, 19.11 cm2/V·s, and the high effective mass of the electrons, 0.66 m0, caused a high resistivity value of 2.75 × 10−3 Ω·m. The calculated Lorenz factor was 1.50 × 10−8 V2/K2, which represents a decrease of 38% over the degenerate limit value (2.44 × 10−8 V2/K2).
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