In order to understand the effect of the interface on the spin pumping and magnetic proximity effects, high resolution transmission electron microscopy and ferromagnetic resonance (FMR) were used to analyze Py/Pt bilayer and Pt/Py/Pt trilayer systems. The samples were deposited by dc magnetron sputtering at room temperature on Si (001) substrates. The Py layer thickness was fixed at 12 nm in all the samples and the Pt thickness was varied in a range of 0-23 nm. A diffusion zone of approximately 8 nm was found in the Py/Pt interfaces and confirmed by energy dispersive X-ray microanalysis. The FMR measurements show an increase in the linewidth and a shift in the ferromagnetic resonance field, which reach saturation. V C 2015 AIP Publishing LLC.
A single crystal with a nominal composition FeSe0.5Te0.5 was obtained by the Bridgman method. A quartz ampulla with the sample inside was vacuum-sealed and maintained at 1050 °C for 37 h to homogenize the sample. Subsequently, the quartz ampulla with the sample was moved with a speed of 2.2 mm/h to a furnace which was at 450 °C. X-ray diffraction confirmed the tetragonal structure of the grown single crystal with the cleavage plane corresponding to the ab plane. Resistance measurements were carried out with magnetic fields from 0 to 9 T, applied parallel to the c axis and ab plane, respectively. A zero-field critical temperature Tc = 14 K was determined. The upper critical field vs. temperature phase diagram was built for temperatures where the resistance drops to 90%, 50%, and 10% of the normal state resistance. The linear extrapolation to T = 0 K gave upper critical fields of 57.2, 51.8, and 46.0 T for Hǁc axis and 109.6, 95.5, and 80.9 T for Hǁab. Applying the Werthamer–Helfand–Hohenberg (WHH) theory, upper critical fields of 39.6, 35.9, and 31.8 T and coherence lengths of 28.8, 30.3, and 32.1 Å were obtained for Hǁc; while for Hǁab, upper critical fields of 51.3, 40.7, and 37.5 T and coherence lengths of 22.3, 26.7, and 31.5 Å were obtained. The value of μ0Hc2/kBTc calculated by the WHH theory exceeds the Pauli limit (1.84 T/K) indicating the unconventional nature of superconductivity. The activation energy U0 has two different rates of change with the applied magnetic field probably due to two different thermal activation mechanisms; the origin of which requires further investigation. A similar behavior is observed in the irreversibility lines.
The effect of native defects originated by a non-stoichiometric variation of composition in CoSb3 on I-V curves and Hall effect was investigated. Hysteretic and a non-linear behavior of the I-V curves at cryogenic temperatures were observed; the non-linear behavior originated from the Poole-Frenkel effect, a field-dependent ionization mechanism that lowers Coulomb barriers and increases emission of charge carriers, and the hysteresis was attributed to the drastic decrease of specific heat which produces Joule heating at cryogenic temperatures. CoSb3 is a narrow gap semiconductor and slight variation in the synthesis process can lead to either n- or p-type conduction. The Sb-deficient CoSb3 presented an n-type conduction. Using a single parabolic model and assuming only acoustic-phonon scattering the charge transport properties were calculated at 300 K. From this model, a carrier concentration of 1.18 × 1018 cm−3 and a Hall factor of 1.18 were calculated. The low mobility of charge carriers, 19.11 cm2/V·s, and the high effective mass of the electrons, 0.66 m0, caused a high resistivity value of 2.75 × 10−3 Ω·m. The calculated Lorenz factor was 1.50 × 10−8 V2/K2, which represents a decrease of 38% over the degenerate limit value (2.44 × 10−8 V2/K2).
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