Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III-V semiconductor compounds and/or electro-optic materials such as lithium niobate. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only approximately 20 MHz (refs 10, 11), although it has been predicted theoretically that a approximately 1-GHz modulation frequency might be achievable in some device structures. Here we describe an approach based on a metal-oxide-semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.

The possibility of light generation and/or amplification in silicon has attracted a great deal of attention for silicon-based optoelectronic applications owing to the potential for forming inexpensive, monolithic integrated optical components. Because of its indirect bandgap, bulk silicon shows very inefficient band-to-band radiative electron-hole recombination. Light emission in silicon has thus focused on the use of silicon engineered materials such as nanocrystals, Si/SiO2 superlattices, erbium-doped silicon-rich oxides, surface-textured bulk silicon and Si/SiGe quantum cascade structures. Stimulated Raman scattering (SRS) has recently been demonstrated as a mechanism to generate optical gain in planar silicon waveguide structures. In fact, net optical gain in the range 2-11 dB due to SRS has been reported in centimetre-sized silicon waveguides using pulsed pumping. Recently, a lasing experiment involving silicon as the gain medium by way of SRS was reported, where the ring laser cavity was formed by an 8-m-long optical fibre. Here we report the experimental demonstration of Raman lasing in a compact, all-silicon, waveguide cavity on a single silicon chip. This demonstration represents an important step towards producing practical continuous-wave optical amplifiers and lasers that could be integrated with other optoelectronic components onto CMOS-compatible silicon chips.

While numerous 3D imaging technologies exist, each addressing niche applications with varying degrees of success, none have achieved the breadth of applicability and impact that digital image sensors have achieved in the 2D imaging world [3][4][5][6][7][8][9][10] . A large-scale two-dimensional array of coherent detector pixels operating as a light detection and ranging (LiDAR) system could serve as a universal 3D imaging platform. Such a system would offer high depth accuracy and immunity to interference from sunlight, as well as the ability to directly measure the velocity of moving objects 11 . However, due to difficulties in providing electrical and 1 photonic connections to every pixel, previous systems have been restricted to fewer than 20 pixels [12][13][14][15] . Here, we demonstrate the first large-scale coherent detector array consisting of 512 (32 × 16) pixels, and its operation in a 3D imaging system. Leveraging recent advances

We fabricated a low-loss (∼0.22dB∕cm) rib waveguide (WG) in silicon-on-insulator with a small effective core area of ∼1.57μm2 and measured the stimulated Raman scattering gain in the WG. We obtained 2.3dB Raman gain in a 4.8-cm-long S-shaped WG using a 1455nm pump laser with a cw power of 0.9W measured before the WG. In addition, we observed nonlinear dependence of Raman gain and optical propagation loss as a function of the pump power. Our study shows that this mainly is due to two-photon absorption (TPA) induced free carrier absorption in the silicon WG. We experimentally determined the TPA induced free carrier lifetime of 25ns, which agrees well with our modeling.