Ion-beam assisted deposition (IBAD) is one of the major techniques for preparing highly textured templates for YBa 2 Cu 3 O 7−x (YBCO) coated conductors. In most applications so far IBAD-MgO has been used. TiN is an alternative material for the IBAD process showing a textured nucleation similar to MgO. Different amorphous or nanocrystalline seed layers such as Al 2 O 3 , Y 2 O 3 or Ta 0.75 Ni 0.25 were found to be suitable for achieving strong cube textures in film thicknesses below 10 nm using reactive ion-beam assisted pulsed laser deposition. The biaxial texture was preserved to a higher thickness using homoepitaxial growth at higher temperatures. Different buffer layer architectures based on IBAD-TiN have been developed on Hastelloy substrates. An electrically conducting buffer layer stack was realized using a double layer of Au and Ir with a final Nb-doped SrTiO 3 cap layer, enabling the epitaxial growth of YBCO on top. Alternatively, a robust simplified buffer architecture was studied using SrZrO 3 directly on TiN, leading to highly textured YBCO layers.
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