Do ESD fails in systems correlate with IC ESD robustness?

Stadler, Wolfgang; Brodbeck, T.; Gärtner, Reinhold; Gossner, Harald

doi:10.1016/j.microrel.2009.07.029

Cited by 5 publications

(1 citation statement)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The first one is the robustness, which is the ability of the product to avoid destruction. An ESD stress generates high current density dissipated into the IC, which could induce thermal effect or oxide breakdown [5]- [7]. Robustness to failure has been largely studied at chip level.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Modeling System ESD Failure and Probability Using IBIS ESD Models

Monnereau

Caignet

Nolhier

et al. 2012

IEEE Trans. Device Mater. Relib.

View full text Add to dashboard Cite

Due to growing number of embedded electronics, estimating failure related to system-level electrostatic discharge (ESD) consideration has become a major concern. In this paper, a behavioral modeling methodology to predict ESD failures at system level is proposed and validated. The proposed models enable time-domain simulation to determine the voltage and current waveforms inside and outside an integrated circuit during ESD events and then to predict the susceptibility of an electronic system to ESD. The purpose of this methodology is based on the improvement of Input/output Buffer Information Specification files widely used in signal integrity simulation. A simple case study is proposed to investigate the susceptibility of latch devices to transient stresses. Simulations and measurements are compared. Analytical formulations to determine the probability of susceptibility failure are proposed and compared with measurements.

show abstract

Section: Introductionmentioning

confidence: 99%