The common memory technologies used in the traditional memory hierarchy, are increasingly constrained by fundamental technology limits. The increasing leakage power for SRAM and refresh dynamic power for DRAM has posed challenges to circuit and architecture designers. Emerging memory technologies such as spin transfer torque RAM (STT-RAM), phase-change RAM (PCRAM), and resistive RAM (RRAM) are being explored as potential alternatives to existing memories in future computing systems. Especially, due to the excellent compatibility with CMOS process and ease of 3D integration, RRAM provides a promising potential for embedded and standalone application. In this talk, current status of RRAM technology will be discussed, including switching mechanism, array architecture, 3D integration, target applications, challenges and future trends. A new era of convolutional computer architectures could be expected after the mature of emerging new NVM technologies.
We found novel organic charge-transfer salts that exhibit reversible resistive memory switching phenomena. Homogeneous layers of these complexes can be easily fabricated using solution processing. The copper-2,3-dichloro-5,6-dicyano-p-benzoquinone complex was investigated in more detail. Devices made of this complex can be reversibly switched between a high and a low resistance state by applying voltage pulses as short as 1 micros. The memory states remain stable for more than 15 h without an electricity source.
Several series of aromatic polyethers and polybenzoxazoles with high thermal stability and low dielectric constant were prepared and characterized. The polyethers were synthesized by nucleophilic aromatic displacement of fluorine with phenoxides. In order to avoid strongly polar groups such as carbonyl and sulfone, trifluoromethyl groups were used to activate the fluorine for displacement. An additional benefit of the presence of the trifluoromethyl groups is the decreased dielectric constant, which fluorinated materials exhibit. This is attributed to two factors: the strong electronegativity of fluorine, resulting in very low polarizability of the C-F bonds, and the larger radius of a fluorine atom in comparison with a hydrogen atom, resulting in increased free volume.Trifluoromethyl substituted terphenyl and quadriphenyl poly(arylether)s prepared in this study exhibit decomposition temperatures far in excess of 500 • C, even in air, dielectric constants below three, and mechanical properties comparable to engineering plastics such as polycarbonate and highperformance thermoplastics such as PEEK.Poly(benzoxazole)s were prepared with and without fluorine substituents. Since most of the poly(benzoxazole)s were insoluble, they were prepared via soluble poly(hydroxyamide) precursors, which were converted to the final polymers by thermal treatment. These materials had dielectric constants as low as 2.69 and also decomposition temperatures far above 500 • C in air.
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