We conducted comparison of the original experimental data of the temperature dependences of thermal expansion in crystals with layered crystalline structure. It is shown that in most crystals with layered structure (graphite, boron nitride, GaSe, GaS, and InSe) the effect of negative thermal expansion can be explained by the specific character of the phonon spectra. It was shown, that in contrast to other crystals with layered structure, negative thermal expansion in the layers’ plane of TlGaSe2 is the result of negative area compressibility. We demonstrate that the thermal expansion of TlGaSe2 crystals can be controlled by illumination, external electric field, and thermal annealing. The nature of observed effects and a special mechanism of the negative area compressibility in TlGaSe2 crystals are discussed.
The deformation effects in electronic spectra of the ternary layered semiconductors TlGaS 2 , TlGaSe 2 and TlInS 2 are considered. It is shown that the influence of hydrostatic pressure, thermal expansion and variation of composition in solid solutions on the band gap of the crystals investigated can be described in the framework of one common model of deformation potentials. This model appears to be close to that of layered semiconductors of the A 3 B 6 group, attesting to the fact that the main principles of formation of band structure in these two groups of layered crystals are the same.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.