Thermally stimulated current in layered semiconductor TlInS2 with incommensurate phase

Deep Traps Distribution in TlInS2Layered Crystals

“…At this point, it is worthwhile to compare the results of present TSC analysis with those obtained bÿ Ozdemir et al [24] on TlInS 2 crystals in the temperature range of 90-200 K. TSC spectra consisted of one pronounced (T m = 187 K, I m = 65 pA) and several non--distinct weak peaks at lower temperatures. As a result of decomposition of the spectra into separate peaks, the authors revealed six trap levels with activation en-…”

“…[23]. In this study, the TSC measurements in TlInS 2 crystals over the temperature range of 10-90 K revealed that there was a trap level in the energy gap with activation energy of 12 meV.Özdemir et al [24] have investigated the trap levels in TlInS 2 crystals by TSC spectroscopy in the temperature range of 90-200 K. Analysis of the experimental spectra represented a series of trap levels with energy depths ranging from 150 to 220 meV in the energy gap. Recently, we carried out TSC measurements on TlInS 2 layered crystals to study the shallow traps and their distribution in the temperature range of 10-100 K [25].…”

The magneto-dielectric properties of compounds and alloys in the systems of TlInS2–TlFeS2, TlInS2–TlFeSe2

“…Let us note also that the color of the sample under investigation is characterized by orange nuance, whereas the crystals of TlInS 2 , selected from the different parties and investigated in [4][5][6][7], possessed different nuances of yellow. Relying on data [11,12], in which strong sensitivity of the physical properties (including temperatures PT) of the layered compound TlInS 2 is determined to a quantity of admixtures in the sample and to the degree of the defectiveness of its crystal structure, it can be supposed that observed anomaly on the curve ε (T) under 206.3 K is related to PT in IC-phase, and under 202.4 K-with PT into the commensurate ferroelectric phase. Additionally, the "bend" around 201 K is the temperature interval of the co-existence of the remainders of the non-disintegrated solitons of IC-phase and domains of low-temperature commensurable ferroelectric phase [4].…”

“…PT in IC-phase is related to the condensation (under T i ≈ 216 K) of soft mode at the point of Brillouin zone with the wave vector of q i (ı; ı; 0.25), where ı the parameter of incommensurability [9]. At T c ≈ 201 K value ı abruptly becomes zero and crystal of TlInS 2 passes into the extrinsic ferroelectric (vector of spontaneous polarization is located in the plane of layer) C-phase with the wave vector q c (0; 0; 0.25) [9][10][11][12][13].…”

Trapping Center Parameters in TlInS2Layered Crystals by Thermally Stimulated Current Measurements

“…We observed two photoluminescence (PL) bands centered at 515 nm (2.41 eV, A-band) and 816 nm (1.52 eV, B-band) at T = 11 K. Analysis of the data showed that the A-band was due to radiative transitions from the moderately deep donor level located at 250 meV below the bottom of the conduction band to the shallow acceptor level located at 20 meV above the top of the valence band. There is only one paper in literature concerning the study of TSC spectra in TlInS 2 crystals in the high-temperature range 90-300 K [16]. A series of trap levels with energy depths ranging from 150 to 220 meV has been found in the energy gap.…”