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Field-effect transistor devices with exfoliated 2D materials are potent in various optical and electronics applications including photodetectors, valleytronics, spintronic, circuits, memory, and optical modulators. However, these devices endure limited gate control, low carrier mobility, and high operating voltage. This study introduces a new asymmetric graphene-rhenium disulfide heterojunction Schottky barrier metal-oxide-semiconductor field-effect transistor engineered with high graphene carrier mobility and high rhenium disulfide I on-off ratio in a 10 nm channel-length device. The proposed device has better gate control ability, I on-off ratio of 10 6 , high carrier mobility (87.44 cm 2 V À1 s À1 ), and low subthreshold swing of 43.12 mV dec À1 in the subthreshold region at 0.05 V applied drain voltage. The significant reduction in subthreshold swing at low voltage opens a suite of high-switching-speed low-powered nanologic applications for the upcoming Internet-of-Things era. The material properties of graphene-rhenium disulfide heterojunctions are derived using an ab initio quantum transport simulation tool.

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The explicit model of the energy yield with respect to irradiance and cell temperature of a photovoltaic (PV) system can be apprehended using pvsyst software. Building on this data, this paper addresses performance challenges for JA Solar, JAP6 (DG) 60-235 solar PV module driving a load of Enphase, IQ6-60-x-240 grid inverter. The data modeling reflects correlation of 62% between panel temperature and output efficiency. Researchers in the past have claimed that extreme temperature exposure as one of the main impediment in decline of solar panel's life span and figured 25 °C as the ideal temperature for optimum yield. This research proposes the Internet of things (IoT)-based smart solar energy system (SES) for smart cities that automatically tune the low-powered cooling unit to lower panel's temperature to outmatch energy yield and augment solar panels life. The analog design of the cooling mechanism is set up for temperature range from −10 °C to 85 °C using hybrid op-amp proportional–integral–derivative (PID) controller and heat sink/fan with surface mount temperature sensor to maintain module temperature. The experiment analysis showed improvement of 1.7% to 2.99% in output efficiency after considering 1.8 W total power intake of the cooling circuit relative to the pvsyst v6.74 results. To access temperature data of solar panel and output current along with in-built system's current consumption, IoT accreditation is done using node MCU and Wi-Fi module.

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