A 10 nm Asymmetric Graphene–Rhenium Disulfide Field‐Effect Transistor for High‐Speed Application

Chawla, Rashmi; Singhal, Poonam; Garg, Amit

doi:10.1002/pssa.201900450

Cited by 1 publication

(5 citation statements)

References 42 publications

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“…This device exhibited excellent performance for HP applications. [140] 5.4. Tungsten Diselenide (WSe 2 )-Based FET Podzorov et al in 2004 studied a WSe 2 channel-based FET.…”

Section: Yoon Et Al In 2011 Incorporated the Performance Limit Of Mosmentioning

confidence: 99%

“…[ 130,160 ] f) The fundamental structure of an asymmetric 2D material based Schottky barrier SB‐MOSFET. [ 140 ] S and D represent the source and drain regions, respectively. The extend regions of the source and drain regions are denoted by S ex and D ex , respectively; h‐d is heavily doped; UL is UL structure, the uncovered part of the channel by the gate electrode; p‐Si is polysilicon.…”

Section: Transition Metal Dichalcogenides (Tmdcs)‐based Fetsmentioning

confidence: 99%

“…[ 106 ] Chawla et al in 2020 studied the sub‐10 nm graphene ReS 2 heterojunction (GRH)‐based Schottky barrier metal oxide semiconductor field‐effect transistor (SB‐MOSFET), extracting bandgap, effective mass, DOS, and all other parameters using DFT with TCAD. [ 140 ] This device has a heterojunction with a 0.3 nm ML graphene and 1.4 nm ReS 2 BL. A Schottky junction with a depletion layer in ReS 2 was observed.…”

Section: Transition Metal Dichalcogenides (Tmdcs)‐based Fetsmentioning

confidence: 99%

“…The high‐ k dielectric constant material Al 2 O 3 was used as a top oxide and thick optimized SiO 2 as a back oxide. [ 140 ] The basic device structure is given in Figure 6f. SB‐MOSFET devices have I ON‐OFF ratio 10 6 , high carrier mobility (87.44 cm 2 V −1 s −1 ), and low SS of 43.12 mV dec −1 in the subthreshold region.…”

Section: Transition Metal Dichalcogenides (Tmdcs)‐based Fetsmentioning

confidence: 99%

“…e) A basic schematic view of ML 2D DG-MOSFETs with ULs [130,160]. f ) The fundamental structure of an asymmetric 2D material based Schottky barrier SB-MOSFET [140]. S and D represent the source and drain regions, respectively.…”

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confidence: 99%

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The objectives of the semiconductor industry include scaling down the silicon (Si)-based devices from bulk to nanoscale, reducing the effective cost, and improving the performance of the device. [1] Semiconductor devices such as metal-oxide semiconductor field-effect transistors (MOSFETs), field-effect transistors (FETs), complementary metal oxide semiconductor (CMOS) transistors, and other semiconductor devices with different architectures and scaling properties have been analyzed according to the guidelines of International Technology Roadmap for Semiconductors (ITRS), International Roadmap for Devices and Systems (IRDS), and Nano Electronics Roadmap for Europe: Identification and Dissemination (NEREID). Moore's law, followed for subsequent scaling down of MOSFETs, FETs, and CMOS devices using 3D semiconductors (Si, gallium nitride, and gallium arsenide), has become irrelevant in the nanoregime. [2,3] Challenges such as device degradation due to short channel effects, leakage current leading to mobility degradation, and heat dissipation issues or "heat death" of conventional 3D semiconductor-based nanodimensional CMOS devices and electronic circuits are faced due to dangling bonds, surface scattering states, undesirable coupling with phonons, creation of interface states, manifestation of the leakage current, static power problem, and large subthreshold swing (SS). [4][5][6] Search for alternate channel materials has been trending in the 2D semiconductor research in order to meet the above mentioned challenges.Richard Feynman, in 1959, introduced researchers to the concept of nanodimensions (<100 nm) and nanotechnology. The semiconductor industry has come a long way since then with newly engineered nanostructures such as carbon nanotubes (CNT), quantum dots, quantum wires, and nanofibers that have led to great advancements in nanotechnology with applications in biomedicine, pharmaceuticals, cosmetics, and environmental issues. [7] Nanomaterials are usually classified into four types based on quantum confinement and the device dimensions, at least one of which is in the nanorange (from 1 to 100 nm). Different types of nanomaterials are represented in Figure 1 and are described as follows. 1) 3D nanomaterials: The nanomaterials for which all three dimensions lie outside the nanometric scale (1-100 nm) are termed as 3D materials. The electrons are free to move in all three directions and thus there is no confinement or limitation for the flow of charge carriers. The bulk 3D nanomaterials consist of bundles of nanowires, nanotubes, bulk powders, or nanoparticles and multiple nanolayers or polycrystals. 2) 2D nanomaterials. The 2D nanomaterials have only one dimension in the nanometric scale whereas the other two dimensions lie outside the nanoscale (1-100 nm). These are similar to a planar structure. The electrons can easily move in two directions and are confined in one direction, for example, nano thin films, nanocoatings, nanolayers, nanosheets, etc. for 2D quantum well systems. 3) 1D nanomaterials: These nanoma...

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“…This device exhibited excellent performance for HP applications. [140] 5.4. Tungsten Diselenide (WSe 2 )-Based FET Podzorov et al in 2004 studied a WSe 2 channel-based FET.…”

Section: Yoon Et Al In 2011 Incorporated the Performance Limit Of Mosmentioning

confidence: 99%

Section: Transition Metal Dichalcogenides (Tmdcs)‐based Fetsmentioning

confidence: 99%