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Organic materials are now being used in a wide range of microelectronic applications in parallel with inorganic materials, because of their superior properties, environmental safety, and low cost. This paper describes the characterization of Aloe vera gel (AVG), a new organic dielectric material. The surface morphology, spatial distribution of elements, and structural characteristics of an AVG layer were examined using scanning electron microscopy, energy-dispersive X-ray spectroscopy (EDX), and X-ray diffraction (XRD), respectively. The resistance of the AVG layer, determined using a four-probe station, was 640 Ω. EDX showed that the elements contained in the layer were carbon, oxygen, aluminum, silicon, calcium, potassium, and copper. The XRD results suggested that the sample primarily consisted of bornite (Cu 5 FeS 4 ), geerite (Cu 8 S 5 ), sal ammoniac (NH 4 Cl), and carobbite (KF).

This paper presents comparison of thermal evaporation method based passivation and BSF formation with different materials (Au, Al, and Cu). Silicon solar cells with different rear surface contact using these materials were fabricated. A comprehensive comparison of the samples have been carried out to find better back surface contact regarding the efficiency by investigating I-V characteristics, fill factor, external quantum efficiency and carrier diffusion length and lifetime, etc. Experimental data revealed that Cu based back surface contact has maximum output efficiency of about 13.73%, whereas Au shows maximum external quantum efficiency of about 86%. Moreover, use of Al shows the maximum carrier diffusion length 97.2μm and highest carrier lifetime of 3.5μs with overall cell efficiency of 12.90% indicating that Al is a promising material for back contact for n +-p-p + back surface field silicon solar cell.

RF MEMS technology can offer enhanced performance and have potential prerogatives over the conventional solid-state devices. RF MEMS Switches can be used because of their extensive electrical characterization in order to the dynamic response in low voltage. This paper presented an implemented design of a RF MEMS switch using ANSYS. After comparing Silicon, Gold and Aluminium material model, this paper also report the best RF MEMS switch model to achieve low voltage, switching frequency and low insertion loss. With applying same voltage on all models, this paper showed the Gold material model gives the most suitable result.