Zinc oxide thin films with different thicknesses were prepared on microscopic glass slides by sol-gel spin coating method, then hydrothermal process was applied to produce zinc oxide nanorod arrays. The nanorod thin films were characterized by various spectroscopic methods of analysis. From the images of field emission scanning electron microscope (FESEM), it was observed that for the film thickness up to 200 nm the formed nanorods with wurtzite hexagonal structure were uniformly distributed over the entire surface substrate. From X-ray diffraction analysis it was revealed that the thin films had good polycrystalline nature with highly preferred c-axis orientation along (0 0 2) plane. The optical characterization done by UV-Vis spectrometer showed that all the films had high transparency of 83 % to 96 % in the visible region and sharp cut off at ultraviolet region of electromagnetic spectrum. The band gap of the films decreased as their thickness increased. Energy dispersive X-ray spectroscopy (EDS) showed the presence of zinc and oxygen elements in the films and Fourier transform infrared spectroscopy (FT-IR) revealed the chemical composition of ZnO in the film.

The parameters of crystalline semiconductor such as types of semiconductor, uniformity of impurity concentration of doped wafer, majority charge carrier concentration, sheet resistivity of doped wafer surface play an important role in solar cell fabrication process during emitter diffusion, that is the most critical step. In this paper, we have used a low cost in house made hot probe measurement setup. A hot plate was used to heat up the wafer up to 100°C. Two k-type thermocouples were placed simultaneously in contact with the hot and cold surface of the wafer to measure the temperature in situ for both hot and cold probe. We have used two copper probes with a voltmeter connected to measure the potential difference (thermoelectric voltage) between two probes for various temperatures up to 100°C with an interval of 10°C. We have taken measurement for commercial silicon wafer (thickness 200 µm) and one side polished 4 inch diameter Si wafer (thickness 660 µm) to determine the wafer type (n-type or p-type). We also calculated thermopower or Seebeck coefficient from the voltage vs. time curve, that is constant for particular substrate. As a process monitoring tool for solar cell fabrication process, after n-type diffusion using POCl3 on p-type silicon wafer of thickness 200 µm, we have done wafer mapping that gives us the information of doping uniformity over the whole surface of wafer both front and back side

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The parameters of crystalline semiconductor such as types of semiconductor, uniformity of impurity concentration of doped wafer, majority charge carrier concentration, sheet resistivity of doped wafer surface play an important role in solar cell fabrication process during emitter diffusion, that is the most critical step. In this paper, we have used a low cost in house made hot probe measurement setup. A hot plate was used to heat up the wafer up to 100°C. Two k-type thermocouples were placed simultaneously in contact with the hot and cold surface of the wafer to measure the temperature in situ for both hot and cold probe. We have used two copper probes with a voltmeter connected to measure the potential difference (thermoelectric voltage) between two probes for various temperatures up to 100°C with an interval of 10°C. We have taken measurement for commercial silicon wafer (thickness 200 µm) and one side polished 4 inch diameter Si wafer (thickness 660 µm) to determine the wafer type (n-type or p-type). We also calculated thermopower or Seebeck coefficient from the voltage vs. time curve, that is constant for particular substrate. As a process monitoring tool for solar cell fabrication process, after n-type diffusion using POCl3 on p-type silicon wafer of thickness 200 µm, we have done wafer mapping that gives us the information of doping uniformity over the whole surface of wafer both front and back side

Organic materials are now being used in a wide range of microelectronic applications in parallel with inorganic materials, because of their superior properties, environmental safety, and low cost. This paper describes the characterization of Aloe vera gel (AVG), a new organic dielectric material. The surface morphology, spatial distribution of elements, and structural characteristics of an AVG layer were examined using scanning electron microscopy, energy-dispersive X-ray spectroscopy (EDX), and X-ray diffraction (XRD), respectively. The resistance of the AVG layer, determined using a four-probe station, was 640 Ω. EDX showed that the elements contained in the layer were carbon, oxygen, aluminum, silicon, calcium, potassium, and copper. The XRD results suggested that the sample primarily consisted of bornite (Cu 5 FeS 4 ), geerite (Cu 8 S 5 ), sal ammoniac (NH 4 Cl), and carobbite (KF).

Although large electronic systems can be constructed almost entirely with digital techniques, many systems still have analog components and current mirror is the core structure for almost all analog and mixed mode circuits. It determines the performance of analog structures, which largely depends on their characteristics. In this paper, we have analyzed a basic type as well as a cascade type of current mirror using enhancement type MOSFET and study different parameters like minimum output voltage, equivalent resistance and output sink current characteristics etc.

RF MEMS technology can offer enhanced performance and have potential prerogatives over the conventional solid-state devices. RF MEMS Switches can be used because of their extensive electrical characterization in order to the dynamic response in low voltage. This paper presented an implemented design of a RF MEMS switch using ANSYS. After comparing Silicon, Gold and Aluminium material model, this paper also report the best RF MEMS switch model to achieve low voltage, switching frequency and low insertion loss. With applying same voltage on all models, this paper showed the Gold material model gives the most suitable result.