We report on measurement of dielectric constant, mid-gap defect density, Urbach energy of tail states in CH 3 NH 3 PbI x Cl 1Àx perovskite solar cells. Midgap defect densities were estimated by measuring capacitance vs. frequency at different temperatures and show two peaks, one at 0.66 eV below the conduction band and one at 0.24 eV below the conduction band. The attempt to escape frequency is in the range of 2 Â 10 11 /s. Quantum efficiency data indicate a bandgap of 1.58 eV.

No abstract

A novel thiophene derivative 7,9-di(thiophen-2-yl)-8H-cyclopenta­[a]acenaphthylen-8-one (DTCPA) is shown to exhibit high electrical conductivity (1.97 × 10–2 ± 0.0018 S/cm at RT) in the crystalline state. The material shows two orders of increase in conductivity from normal solid to single crystalline state. The crystal structure has S···S chalcogen bonding, C–H···O hydrogen bonding, and π···π stacking as the major intermolecular interactions. The nature and strength of the S···S interactions in this structure have been evaluated by theoretical charge density analysis, and its contribution to the crystal packing quantified by Hirshfeld surface analysis. Further, thermal and morphological characterizations have been carried out, and the second harmonic generation (SHG) efficiency has been measured using the Kurtz–Perry method.

We report nanosecond domain time-of-flight measurements of electron and hole photocarriers in methylammonium lead iodide perovskite solar cells. The mobilities ranged from 0.06 to 1.4 cm2/Vs at room temperature, but there is little systematic difference between the two carriers. We also find that the drift mobilities are dispersive (time-dependent). The dispersion parameters are in the range of 0.4–0.7, and they imply that terahertz domain mobilities will be much larger than nanosecond domain mobilities. The temperature-dependences of the dispersion parameters are consistent with confinement of electron and hole transport to fractal-like spatial networks within nanoseconds of their photogeneration.

Lead-trihalide perovskite solar cells are an important photovoltaic technology. We investigate the effect of light induced degradation on perovskite solar cells. During exposure, the open-circuit voltage (Voc) of the device increases, whereas the short-circuit current (Isc) shows a decrease. The degradation can be completely recovered using thermal annealing in dark. We develop a model based on light induced generation of ions and migration of these ions inside the material to explain the changes in Isc, Voc, capacitance and dark current upon light exposure and post-exposure recovery. There was no change in defect density in the material upon exposure.