A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-dose-rate gain degradation in bipolar junction transistors. Multiple-trapping simulations show that space charge limited transport is partially responsible for low-dose-rate enhancement. At low dose rates, more holes are trapped near the silicon-oxide interface than at high dose rates, resulting in larger midgap voltage shifts at lower dose rates. The additional trapped charge near the interface may cause an exponential increase in excess base current, and a resultant decrease in current gain for some NPN bipolar technologies.
The Acacia AC100M is a 100 Gigabits per second (Gbps) commercial, coherent optical transceiver module with digital signal processing (DSP) application specific integrated circuit (ASIC). The AC100M was characterized with noise-loaded input to simulate power-starved link operation on the receiver and decoder for performance testing. Gamma radiation and 65 MeV proton radiation test campaigns at Defense MicroElectronics Activity (DMEA) and UC Davis Crocker Nuclear Laboratory (CNL), respectively, were completed to assess single event effects (SEEs) and total ionizing dose (TID) effects on the AC100M. After exposure to gamma radiation with TID level of ~13.7 krad(Si), communication with the AC100M module was lost and power cycling of the module and evaluation board could not restore nominal operation. The AC100M ASIC survived and experienced no performance degradation from proton equivalent TID exposure up to 66.7 krad(Si) with proton radiation. After proton equivalent TID level of 101 krad(Si), the AC100M did not functional nominally after power cycling. The calculated AC100M ASIC proton SEE cross section was 4.39×10 -10 cm 2 at the 65 MeV proton energy level.
Experimental assessment of commercial 100/200 Gbps optical coherent DSP modem ASIC completed with 64 MeV and 480 MeV proton radiation test campaigns. Single event effect cross sections calculated and no performance degradation observed for proton fluence levels up to 1.27×10 12 p/cm 2 with equivalent total ionizing dose exposure to 170 krad(Si).
I. INTRODUCTIONHE Inphi CL20010A1 is an optical coherent digital signal processing (DSP) application-specific integrated circuit (ASIC) modem. The ASIC is a monolithic, 28-nm complementary metal-oxide-semiconductor (CMOS) modem, which supports transmission and detection of 100 Gbps and 200 Gbps information rates with polarization-multiplexed differential and non-differential quadrature phase shift keyed (QPSK) or 16 quadrature amplitude modulated (16-QAM) signals. The CL20010A1 handles host and line framing/deframing, soft-decision forward error correction (SD-FEC) encoding/decoding, and high-speed (~60 GSPS) analog input and output [1]. In addition, the receive channel performs high-speed DSP functions comprising polarization rotation, carrier phase recovery, and optical fiber dispersion compensation. There have not yet been published studies on space radiation testing and qualification of commercial optical coherent transceivers with DSP ASICs.In this work, we experimentally investigated (i) the susceptibility of the CL20010A1 to single event effects (SEEs) and (ii) CL20010A1 performance for increasing levels of fluence and equivalent total ionizing dose (TID). The 64 MeV SEE and TID test campaign was performed at UC Davis Crocker Nuclear Laboratory (CNL), and the 480 MeV SEE Manuscript
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