In this paper, the authors have investigated the structural and electrical properties of thin film of Al2O3 deposited by radio-frequency sputtering and plasma enhanced atomic layer deposition (PEALD) technique. Different deposition and process parameters for the sputtered and PEALD Al2O3 films were chosen to investigate their effect on the structural and electrical characteristics of the film. X-ray diffraction result shows the dominant peak of Al2O3 in both the cases at 2θ = 56° indicating (312) film orientation. Multiple angle analysis of sputtered and PEALD Al2O3 film shows a refractive index in the range of 1.70–1.74 and 1.65–1.69, respectively. Electrical characteristics indicate that the device fabricated by PEALD and annealed at 425 °C shows the positive flatband voltage of 3.5 V and improved leakage behavior as compared to the film deposited by sputtering.
In this article, we report the structural and electrical properties of metal-ferroelectric-high k dielectric-silicon (MFeIS) gate stack for non-volatile memory applications. Thin film of sputtered SrBi 2 Nb 2 O 9 (SBN) was used as ferroelectric material on 5-15 nm thick high-k dielectric (Al 2 O 3 ) buffer layer deposited using plasma-enhanced atomic layer deposition (PEALD). The effect of annealing on structural and electrical properties of SBN and Al 2 O 3 films was investigated in the temperature range of 350-1000 • C. X-ray diffraction results of the SBN and Al 2 O 3 show multiple phase changes with an increase in the annealing temperature. Multiple angle ellipsometry data show the change in the refractive index (n) of SBN film from 2.0941 to 2.1804 for non-annealed to samples annealed at 600 • C. For Al 2 O 3 film, n < 1.7 in the case of PEALD and n > 1.7 for sputtered film was observed. The leakage current density in MFeIS structure was observed to two orders of magnitude lower than metal/ferroelectric/silicon (MFeS) structures. Capacitance-voltage (C-V) characteristics for the voltage sweep of −10 to 10 V in dual mode show the maximum memory window of 1.977 V in MFeS structure, 2.88 V with sputtered Al 2 O 3 and 2.957 V with PEALD Al 2 O 3 in the MFeIS structures at the annealing temperature of 500 • C.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.