Preparation and characterization of Al2O3 film deposited by RF sputtering and plasma enhanced atomic layer deposition

Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, Bhawna

doi:10.1116/1.5023591

Cited by 13 publications

(9 citation statements)

References 19 publications

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“…To date, Al 2 O 3 is one of the most extensively researched thin films deposited by ALD, owing to its high permittivity, chemical and thermal stability, good adhesion, and chemical compatibility with semiconductor processes. − This has led to Al 2 O 3 thin films being utilized in various applications, such as barrier materials, optical coatings, high-κ dielectric for gate oxides, and more. − ALD of Al 2 O 3 can be performed using AlCl 3 and H 2 O as precursors, but trimethylaluminum (TMA) is the best-known example, owing to its high reactivity, self-terminating reactions, and high-quality films even at low deposition temperatures. , Cost minimization and pyrophoric nature of TMA have led researchers to investigate substitute Al 2 O 3 precursors, including AlMe 2 Cl, − Al(NEt 2 ) 3 , − Al(NMe 2 ) 3 , Al(OEt 3 ), Al(O n Pr) 3 , , AlMe 2 O i Pr, − and many more. ,− …”

Section: Introductionmentioning

confidence: 99%

Comparative In Situ Study of the Initial Growth Trends of Atomic Layer-Deposited Al₂O₃ Films

2022

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In this work, we compare the initial growth trends of atomic layerdeposited aluminum oxide (Al 2 O 3 ) using three different Al precursors and H 2 O as the oxygen source on hydroxyl-terminated silicon (Si-OH) and hydrogenterminated silicon (Si-H) surfaces. Trimethylaluminum (TMA), triethylaluminum (TEA), and dimethylaluminum chloride (DMAC) are chosen as the Al precursors due to comparable variations between their structures. Thickness evolution obtained from in situ ellipsometry exhibits similar behavior for all three precursors with initially accelerated growth during the first cycle on the Si-OH starting surface, which then proceeds in a steady manner characteristic of atomic layer deposition (ALD). In situ Fourier transform infrared spectroscopy (FTIR) shows that at 200 °C both TEA and TMA react with above 85% of −OH ligands present on the initial Si-OH substrate and the subsequent H 2 O dose reacts with only ∼50% of the surface C−H groups, indicating incomplete removal of the methyl or ethyl ligands on the surface. Al 2 O 3 growth on the Si-H surface exhibits a delay due to the lack of surface hydroxyl groups, leading to formation of Si-Me or Si-Et groups. A lower reactivity of DMAC compared to TMA and TEA results in a lower initial selectivity fraction. The results provide vital insight into the importance of precursor selection for area-selective ALD applications and open a pathway for realizing selective Al 2 O 3 deposition based on inherent substrate selectivity.

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Section: Introductionmentioning

confidence: 99%

Comparative In Situ Study of the Initial Growth Trends of Atomic Layer-Deposited Al₂O₃ Films

2022

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“…The proposed deposition technique utilized in this work is the magnetron sputtering method powered by an radio frequency (RF) source. This was validated as having great applicability in depositing the proposed oxides layers such as Al 2 O 3 , Er 2 O 3 [31][32][33].…”

Section: Deposition Methods and Materialsmentioning

confidence: 84%

“…Furthermore, the shape and main characteristics of TDS spectra obtained for the bulk oxides were analyzed. Thus, investigations regarding the desorption of H 2 O (18), N 2 (28), O 2 (32), and CO 2 (44) were performed at a heating rate of 10 • C/min.…”

Section: Surface Topography Characterizationsmentioning

confidence: 99%

Deposition, Morphological, and Mechanical Evaluation of W and Be-Al2O3 and Er2O3 Co-Sputtered Films in Comparison with Pure Oxides

et al. 2021

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Compact and defect-free high melting point oxide strengthened metallic matrix configurations are promising to resolve the hydrogen permeation and brittleness issues relevant to the fusion research community. Previous studies on oxide addition to metallic matrix demonstrated a mitigation in brittleness behavior, while deposition techniques and material configurations are still to be investigated. Thus, here, we report the structural, morphological, and mechanical characterization of metal-oxides thin layers co-deposited by radio frequency (RF)and direct current (DC) magnetron sputtering. A total of six configurations were deposited such as single thin layers of oxides (Al2O3, Er2O3) and co-deposition configurations as metal-oxides (W, Be)—(Al2O3, Er2O3). The study of films roughness by atomic force microscopy (AFM) method show that for Al2O3 metallic-oxides is increased to an extent that could favor gaseous trapping, while co-depositions with Be seem to promote an increased roughness and defects formation probability compared to W co-depositions. Lower elastic modulus on metal-oxide co-depositions was observed, while the indentation hardness increased for Be and decreased for W matrix configurations. These outputs are highly relevant for choosing the proper compact and trap-free configuration that could be categorized as a permeation barrier for hydrogen and furtherly studied in laborious permeation yield campaigns.

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“…Refractive index of the sputtered PZT film decreases from 2.9 to 2 with the annealing temperature from 500 to 650 ° C. For the PEALD HfO 2 film, the refractive index first increases from 1.8 to 2.6 with the annealing temperature from 450 to 500 ° C, the refractive index further decreases with increase in the annealing temperature. The PZT and HfO 2 film shows maximum refractive index at the annealing temperature of 500 ° C. Higher refractive index indicates higher film density, which was due to the solid phase crystallization of deposited films (Shih and Dove, 1994; Ottermann and Bange, 1996; Es-Souni et al , 2001; Mohamed et al , 2004; Iakovlev et al , 2005; Tarre et al , 2008; Wang et al , 2017; Singh et al , 2018a, 2018b; Etinger-Geller et al , 2019; Hatayama et al , 2019). Reduction in the refractive index with further increase in the annealing temperature was due to the loss in the film crystallization, observed from the plot.…”

Section: Resultsmentioning

confidence: 99%

“…To mitigate these undesirable effects, it was proposed to use a thermodynamically stable insulating buffer layer sandwiched between ferroelectric and silicon (Lu, 2012). Different insulating oxide layers such as SiO 2 , Si 3 N 4 and Al 2 O 3 were widely investigated for metal/ferroelectric/insulator/silicon (MFeIS)-FET applications in the past few decades and a significant improvement in the electrical and ferroelectric properties have been observed (Singh et al , 2017; Singh et al , 2018a, 2018b).…”

Section: Introductionmentioning

confidence: 99%

Integration of perovskite Pb[Zr_0.35Ti_0.65]O₃/HfO₂ ferroelectric-dielectric composite film on Si substrate

Singh

Jha

Goswami

et al. 2020

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Purpose The purpose of this paper is to investigate the effect of high-k material HfO2 as a buffer layer for the fabrication of metal-ferroelectric-insulator-silicon (MFeIS) structures on Si (100) substrate. Design/methodology/approach RF-sputtered Pb[Zr0.35Ti0.65]O3 or (PZT) and plasma-enhanced atomic layer deposited HfO2 films were selected as the ferroelectric and high-k buffer layer, respectively, for the fabrication of metal-ferroelectric-insulator-silicon (MFeIS) structures on Si (100) substrate. Multiple angle ellipsometry and X-ray diffraction analysis was carried out to obtain the crystal orientation, refractive index and absorption coefficient parameters of the deposited/annealed films. In the different range of annealing temperature, the refractive index was observed in the range of 2.9 to 2 and 1.86 to 2.64 for the PZT and HfO2 films, respectively Findings Electrical and ferroelectric properties of the dielectric and ferroelectric films and their stacks were obtained by fabricating the metal/ferroelectric/silicon (MFeS), metal/ferroelectric/metal, metal/insulator/silicon and MFeIS capacitor structures. A closed hysteresis loop with remnant polarization of 4.6 µC/cm2 and coercive voltage of 2.1 V was observed in the PZT film annealed at 5000 C. Introduction of HfO2 buffer layer (10 nm) improves the memory window from 5.12 V in MFeS to 6.4 V in MFeIS structure with one order reduction in the leakage current density. The same MFeS device was found having excellent fatigue resistance property for greater than 1010 read/write cycles and data retention time more than 3 h. Originality/value The MFeIS structure has been fabricated with constant PZT thickness and varied buffer layer (HfO2) thickness. Electrical characteristics shows the improved leakage current and memory window in the MFeIS structures as compared to the MFeS structures. Optimized MFeIS structure with 10-nm buffer layer shows the excellent ferroelectric properties with endurance greater than E10 read/write cycles and data retention time higher than 3 h. The above properties indicate the MFe(100 nm)I(10 nm)S gate stack as a potential candidate for the FeFET-based nonvolatile memory applications.

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Preparation and characterization of Al2O3 film deposited by RF sputtering and plasma enhanced atomic layer deposition

Cited by 13 publications

References 19 publications

Comparative In Situ Study of the Initial Growth Trends of Atomic Layer-Deposited Al₂O₃ Films

Comparative In Situ Study of the Initial Growth Trends of Atomic Layer-Deposited Al₂O₃ Films

Deposition, Morphological, and Mechanical Evaluation of W and Be-Al2O3 and Er2O3 Co-Sputtered Films in Comparison with Pure Oxides

Integration of perovskite Pb[Zr_0.35Ti_0.65]O₃/HfO₂ ferroelectric-dielectric composite film on Si substrate

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Preparation and characterization of Al2O3 film deposited by RF sputtering and plasma enhanced atomic layer deposition

Cited by 13 publications

References 19 publications

Comparative In Situ Study of the Initial Growth Trends of Atomic Layer-Deposited Al2O3 Films

Comparative In Situ Study of the Initial Growth Trends of Atomic Layer-Deposited Al2O3 Films

Deposition, Morphological, and Mechanical Evaluation of W and Be-Al2O3 and Er2O3 Co-Sputtered Films in Comparison with Pure Oxides

Integration of perovskite Pb[Zr0.35Ti0.65]O3/HfO2 ferroelectric-dielectric composite film on Si substrate

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Comparative In Situ Study of the Initial Growth Trends of Atomic Layer-Deposited Al₂O₃ Films

Comparative In Situ Study of the Initial Growth Trends of Atomic Layer-Deposited Al₂O₃ Films

Integration of perovskite Pb[Zr_0.35Ti_0.65]O₃/HfO₂ ferroelectric-dielectric composite film on Si substrate