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This paper deals with the analysis of performance of Canny and Laplacian of Gaussian filter in edge detection of retinal images. Edge detection is one of the methods in image segmentation in Image Processing. Classical methods of edge detection involve convolving the image with an operator (a 2-D filter), which is constructed to be geometry of the operator which determines a characteristic direction in which it is most sensitive to edges. It is important to have efficient edge detection technique. In this paper, comparative analysis of the aforesaid filters is done and found that Canny edge operator performs better than Laplacian of Gaussian filter in most of the varieties of retinal images under various conditions. Here in this paper, we pertain only with human retinal images under diverse conditions. We have shown healthy retina, retina blood vessels, disease affected retina, optic disc etc.

Electroabsorption (EA) measurements can be used to identify the type of excitons contributing to the absorption spectra of semiconductors. However, the shape of the EA spectrum may vary depending on the mode of measurement due to the optical interference effects. Analysis without considering these effects may lead to erroneous conclusions. In this work, we present EA measurements and analysis for reflection mode measurements considering optical interference effects. We compared the inferences with transmission mode measurements and discuss the limitations. We identified the nature of excitons associated with each transition in the absorption spectrum of poly[(2,5-bis(2-hexyldecyloxy)-phenylene)-alt-(5,6-difluoro-4,7-di(thiophen-2-yl)benzo[c]-[1,2,5]-thiadiazole)] thin film from EA measurements. The bands at 1.89, 2.05, and 2.27 eV had a mixed nature consisting of charge transfer and Frenkel characteristics. Of these, the band at 2.05 eV showed the strongest charge transfer characteristic. From thickness dependent measurements, we showed that the interference effects increase with the thickness of the semiconductor layer. The nature of excitons, however, could still be deduced qualitatively from reflection mode EA measurements.

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In an organic semiconductor optoelectronic device, the built-in field within the active layer is typically determined by the difference in contact potentials of the device. However, the presence of space charges and trap states contribute to the electric field within the thin film. Depending on the maximum applied forward voltage, the trap states can be charged, inducing hysteresis in the optoelectronic response of the system. In this work, we investigate the electric fields inside organic photovoltaic device structures, in the presence of traps, using electroabsorption (EA) spectroscopy. Comparing simulations with our experimental results, we explained the origin of hysteresis in the electroabsorption signal as a function of applied DC bias. We solved Poisson’s equation to estimate the densities of trapped carriers in the active layers. The filled trap densities in poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly[(2,5-bis(2-hexyldecyloxy)phenylene)-alt-(5,6-difluoro-4,7-di(thiophen-2-yl)benzo[c]-[1,2,5]thiadiazole)] (PPDT2FBT) were found to be ∼1×1017 and ∼6×1016 cm−3, respectively. From the transient EA measurements, the estimated values of energies of the trap states with respect to the HOMO level were 0.82 and 0.76 eV in P3HT and 0.70 and 0.64 eV in PPDT2FBT, which indicated the presence of midgap traps in these organic semiconductor thin films. Such trap induced changes in the internal fields within the active layers, affect the mobility and carrier transport in the organic optoelectronic devices. The midgap traps lead to exciton quenching and also act as non-radiative recombination centers, resulting in reduction in luminescence efficiency of the active layers.

Whether organic semiconductors, in their pristine form, are inherently intrinsic or involuntarily doped is an open question that is yet to be addressed. In this work, the source of charge carriers within pristine organic semiconductors, processed in a controlled inert ambience, is investigated using organic metal− insulator−metal capacitor (OMISCAP) devices. Top-gate and bottom-gate architecture of OMISCAP devices based on various organic semiconductors along with different combinations of metal−semiconductor junctions are demonstrated. The impact of the metal−semiconductor junction and the semiconductor thickness on the capacitance−voltage (C−V) characteristics of MISCAP devices is studied to ensure the role of contact-induced charge injection into the semiconductor, contrary to involuntary doping as the source of charge. The charge injection from the metal to the semiconductor is found to be the predominant source of charge carriers inside a pristine organic semiconductor rather than inadvertent doping. The findings in this report are further substantiated using TCAD device simulation.

This paper proposes the design of high speed Vedic Multiplier using the compressor which is based on ancient Indian Vedic mathematics that has improved the performance of multiplier. As the technology advent the Multiplier require high speed , low power and small area. Vedic mathematics, a system of ancient Indian mathematics, which has a unique technique of solutions based on only 16 sutras. In this paper we introduce a new architecture of Vedic multiplier by using 4:2 compressors and 7:2 compressors for addition that increase the speed of Multiplier and reduce the area 2% than Urdhwa-Tiryakbhyam Multiplier. The 7:2 compressors are made of 5:2 compressors and two full adders. The design was performed on a Xilinx Spartan 3 series of FPGA and the timing and area of the design, on the same have been calculated.

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