In this paper, HBT (Heterojunction Bipolar Transistor) gain measurements under large signal excitation at 14 and 28 GHz are reported. The measurement system uses active loads in order to obtain * Rockwell Intemationa1,Science center, Thousand Oaks,CA, USA. corresponding to the 1 dB compression point exitation for different transistors are shown in Figures 2 to 5. 570 CRC Ottawa, Tony Lavene and Somsack Sychaleun of Carleton University for their contribution.
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