Investigation of the characteristics of new HBT's under large signal excitation

Abstract

In this paper, HBT (Heterojunction Bipolar Transistor) gain measurements under large signal excitation at 14 and 28 GHz are reported. The measurement system uses active loads in order to obtain * Rockwell Intemationa1,Science center, Thousand Oaks,CA, USA. corresponding to the 1 dB compression point exitation for different transistors are shown in Figures 2 to 5. 570 CRC Ottawa, Tony Lavene and Somsack Sychaleun of Carleton University for their contribution.